2N5686 ,NPN Transistor2t, TIME μ (s)2N5684 2N56861.00.7 D = 0.50.50.30.20.2P(pk)0.1 θ (t) = r(t) θJC JCθ = 0.584 °C/W M ..
2N5769 ,Leaded Small Signal Transistor General Purpose
2N5769 ,Leaded Small Signal Transistor General Purpose
2N5771 ,PMP SILICON SWITCHING TRANSISTORS
2N5771 ,PMP SILICON SWITCHING TRANSISTORS
2N5772 ,NPN Switching Transistorapplications involving pulsed or low duty cycle operations
2SC2873 ,Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsApplications Unit: mmPower Switching
2SC2873-O , NPN Silicon Epitaxial Transistors
2SC2878 ,Transistor Silicon NPN Epitaxial Type For Muting and Switching Applications2SC2878 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC2878 For Muting and Switching
2SC2878 ,Transistor Silicon NPN Epitaxial Type For Muting and Switching ApplicationsApplications Unit: mm High emitter-base voltage: V = 25 V (min) EBO High reverse h : Reverse ..
2SC2878A , For Muting and Switching Applications
2SC2878-A , For Muting and Switching Applications
2N5684-2N5686
PNP Transistor
High-Current Complementary
Silicon Power T ransistors.. designed for use in high–power amplifier and switching circuit
applications. High Current Capability –
IC Continuous = 50 Amperes. DC Current Gain –
hFE = 15–60 @ IC = 25 Adc Low Collector–Emitter Saturation Voltage –
VCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc
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(1) Indicates JEDEC Registered Data.
3000 20 40 60 80 100 120 140 160 180 200
Figure 1. Power DeratingTEMPERATURE (°C)
, POWER DISSIP
TION (W
TTS)
Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed.
