2N5682 ,PNP/NPN HIGH VOLTAGE SILICON TRANSISTORSELECTRICAL CHARACTERISTICS (25° C Ambient Temperature unless otherwise noted) (Note 6)
SYMBOL CH ..
2N5682 ,PNP/NPN HIGH VOLTAGE SILICON TRANSISTORSELECTRICAL CHARACTERISTICS (25° C Ambient Temperature unless otherwise noted) (Note 6)
SYMBOL CH ..
2N5682 ,PNP/NPN HIGH VOLTAGE SILICON TRANSISTORSELECTRICAL CHARACTERISTICS (25° C Ambient Temperature unless otherwise noted) (Note 6)
SYMBOL CH ..
2N5682 ,PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS2N56812N5682®SILICON NPN TRANSISTORS■ STMicroelectronics PREFERREDSALESTYPES ■ NPN TRANSISTOR
2N5682 ,PNP/NPN HIGH VOLTAGE SILICON TRANSISTORSFAIRCHILD SEMICONDUCTOR
3469674 FAIRCHILD SEMICONDUCTOR
-lltlriltmtNi-lei-
FAIRCHILD
Il8lle ..
2N5684 ,PNP TransistorELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
2SC2856 , Silicon NPN Epitaxial
2SC2857 ,NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC2859 ,Transistor Silicon NPN Epitaxial (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching ApplicationsApplications Excellent h linearity : h = 25 (min) (V = 6 V, I = 400 mA) FE FE (2) CE C Compl ..
2SC2873 ,Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsApplications Unit: mmPower Switching
2SC2873-O , NPN Silicon Epitaxial Transistors
2SC2878 ,Transistor Silicon NPN Epitaxial Type For Muting and Switching Applications2SC2878 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC2878 For Muting and Switching
2N5682
PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS
2N5681
2N5682SILICON NPN TRANSISTORS STMicroelectronics PREFERRED
SALESTYPES NPN TRANSISTOR
APPLICATIONS GENERAL PURPOSE SWITCHING GENERAL PURPOSE AMPLIFIERS
DESCRIPTION The 2N5681, 2N5682 are high voltage silicon
epitaxial planar NPN transistors in Jedec TO-39
metal case intended for use as drivers for high
power transistors in general purpose, amplifier
and switching applications.
The 2N5682 complementary PNP type is
2N5680.
December 2000
ABSOLUTE MAXIMUM RATINGS1/4
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
∗ Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
2N5681 / 2N56822/4
2N5681 / 2N56823/4
. consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2000 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://
2N5681 / 2N56824/4
:
www.ic-phoenix.com
.
