2N5641 ,Trans GP BJT NPN 35V 1A 4-Pin Style M135FEATURES: MT.71
q Designed for VHF, 12.5V AM and 28V FM transmitters
I Withstands severe mismatch ..
2N5642 ,V(ceo): 35V; V(cb): 65V; V(eb): 4V; 3A; 30W; NPN silicon RF power transistorMAXIMUM RATINGSUmt jRating Symbol Valu-Collector Emitter Voltage VCEO 35 VdcCollector Bass Voltage ..
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2N5641
Trans GP BJT NPN 35V 1A 4-Pin Style M135
THOMSON-CSF COMPONENTS CORPORATION
DESCRIPTION:
These SSM devices are epitaxial silicon NPN-planar transistors designed
primarily for 12.5 volt AM class C rf amplifiers functional in the
_ .iri Montgomeryville, .RA 18936 I (215) 362-8500 ll TWX 5]0-661-7299 .
05c D I] 7931237 0000135 T T" D 7133'“.
T SOLID STATE MICROWAVE
2N5641
2N5642
2N5643
7 W/20 W/4O W, 28 V, VHF POWER TRANSISTOR
aviation band 118-136 MHz and for 28V FM class C rf amplifiers Ate,
utilized in ground station transmitters. These devices utilize ballasted .
emitter resistors and improved metalization systems to achieve
optimum load mismatch capability.
FEATURES: mm
0 Designed for VHF, 12.5V AM and 28V FM transmitters
0 Withstands severe mismatch under operating conditions
. Low Inductance stripline package
. All Leads electrically isolated from stud
ABSOLUTE MAX, RATINGS (+25°C except where noted)
Symbol Characteristic 2N5641 2N5642 2N5643
VCBO Collector to Base Voltage 65.V 65.V 65.V
VCEO Collector to Emitter Voltage 35.V 35.V 35.V
VEBO Emitter to Base Voltage 4.V 4.V 4.V
k: (max) Continuous Collector Current 1.0A 3.0A 5.0A
PD Total Dissipation at 250C Stud 15,W 30.W 60.W
¢JC _Therrnal Resistance (Junction to Stud) ll.7°C/W 5.8°C/W 2.90C/W
T] Junction Temperature -650C to 200°C -650C to 200°C --650C to 200°C
Tstg Storage Temperature -650C to 200°C -650C to 200°C -650C to 200°C
Pkg Package MT71 MT72 MT72
ELECTRICAL CHARACTERISTICS (TA = 25°C)
2N5641 2N5642 2N5643
Symbol Characteristic Test Conditions Min. Max. Min. Max. Min. Max.
BVCEO Collector to Emitter IC= 200mA, IB = 0 35.0V - 35.0V - 35.0V -
Breakdown Voltage Pulsed through 25mH
BVCES Collector to Emitter Ic = 200mA, VBE = 0 65.0V - 65.0V - 65.0V -
Breakdown Voltage Pulsed through 25mH
BVEBO _Emitter to Base IE = 5mA, IC= 0 4.0V -
Breakdown Voltage IE = 10mA, Ic = 0 4.0V - 4.0V -.
'CBO cot,":',,',,"" VCB = 30v, IE = o - 1.0mA - 1.0mA - 1.0mA
hFE DC Current Gain VCE = 5v, It = 100mA 5.0 -
VCE = 5V, IC = 200mA 5.0 -
VCE = 5V, IC = 500mA 5.0 -
fr Gain Bandwidth VCE = lov, IC = 100mA 300.mHz -
Product VCE = 10V, 1C = 200mA 250.mHz -
vcr: = 10V, IC = 500mA 200.mHz -
fo = 100mHz
Cob Output VCB = 30V, IE = 0V
Capacitance fo = 1.0mHz - 15. pF - M. pF - 65. pF
Pout Power Output 0 = l75mHz, VCE = 28V 7.W - 20.W - 40.W -
Class C
Pg Power Gain f0 _ l75mHz, VCE = 28V 8.4 dB - 8.2 dB - 7.6 dB -
Class C
n Collector Efficiency fo = 175mHz, VCE = 28V 60.% - 60.% - 60.% -
Class C
tt , 880-600
THOMSON-CSF
1m54V/4
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2N5641
13 2 "it; f= 176 MHz, Vcc = 28V
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a t 0.8 12.67 2.57 - i 5.25 18.55 -i30.38
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POWER IN (WATTS)
-P0wer Output vs Power Input Network Impedance at Transistor Terminals
- 2N5642
EFFICIENCY 's
" --. "k' t = 175 MHz, Vcc = 28V
" " l.. PIN Pom INPUT OUTPUT
a - ly WATTS WATTS OHMS OHMS
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POWER IN (WATTS)
Power Output vs Power Input Network Impedance at Transistor Terminals
2N5643
ro r ----- k' f= 175 MHz, Vee = 28V
emuzm -10 d.
so 2/ / th pm Pour INPUT OUTPUT
/ sesse''" -eo§ WATTS WATTS OHMS OHMS
~50 _ / '3
ii /// -aoé 2.0 28.5 ,85 +1120 3.25- i 7.05
i wt;''''''" "ur 11mm " awLFur 0M." 4,0 43.0 1.02 4 j 1.32 4.46 -1 5.40
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8.0 60.5 1.05 +1135 5.45 - i 4.12
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POWER IN (WATTS)
Power Output vs Power Input Network Impedance at Transistor Terminals
22/1/5252;
