2N5638 ,N-Channel Switchapplications involving pulsed or low duty cycle operations.
2N5638 ,N-Channel SwitchELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
2N5638 ,N-Channel Switch2N56382N5638N-Channel Switch• This device is designed for low level analog switchng, sample and hol ..
2N5639 ,JFET Chopper TransistorsMAXIMUM RATINGSTO–92Rating Symbol Value UnitCASE 291Drain–Source Voltage V 30 Vdc STYLE 5DS23Drain– ..
2N5640 ,N-channel JFET switchFEATURES ABSOLUTE MAXIMUM RATINGS
" . Economy Packaging (T A=25°G unless otherwise spatoified)
8 ..
2N5640 ,N-channel JFET switchFEATURES ABSOLUTE MAXIMUM RATINGS
" . Economy Packaging (T A=25°G unless otherwise spatoified)
8 ..
2SC2833 ,Si NPN triple diffused. High speed switching.Absolute Maximum Ratings (Ta=25°C)T'"-'-Unit 1 mmHe; . 15.5max. 4.7-H 13 5 ' . max.I . max.3. l11.0 ..
2SC2845 ,SILICON NPN EPITAXIAL PLANARPANASONIC INl)L/ELEKCiHiihI+ 7iilC I) IEEIBEBSLI unmeaa aI-#57929pI,"Si-ln2SC28452$C2845' U a V NPN ..
2SC2851 ,Transistors (Selection Guide by Applications and Functions)Wuan-eDem.l Transistors (Selection Guide by
2SC2856 , Silicon NPN Epitaxial
2SC2857 ,NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC2859 ,Transistor Silicon NPN Epitaxial (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching ApplicationsApplications Excellent h linearity : h = 25 (min) (V = 6 V, I = 400 mA) FE FE (2) CE C Compl ..
2N5638
N-Channel Switch
2N5638 2N5638 N-Channel Switch • This device is designed for low level analog switchng, sample and hold circuits and chopper stabilized amplifiers. • Sourced from process 51. TO-92 1 1. Drain 2. Source 3. Gate Absolute Maximum Ratings * T =25°C unless otherwise noted C Symbol Parameter Value Units V Drain-Gate Voltage 30 V DG V Gate-Source Voltage -30 V GS I Forward Gate Current 50 mA GF T , T Operating and Storage Junction Temperature Range -55 ~ +150 °C J STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics V Gate-Source Breakdown Voltage V = 0, I = -10μA-30 V (BR)GSS DS G I Gate Reverse Current V = -15V, V = 0 -1.0 nA GSS GS DS I Drain Cutoff Leakage Current V = 12V, V = 15V 1.0 nA D(off) DS GS On Characteristics I Zero-Gate Voltage Drain Current * V = 20V, I = 0 50 mA DSS DS GS r Drain-Source On Resistance V = 0V, I = 1.0mA 30 Ω DS(on) GS D Small Signal Characteristics r Drain-Source On Resistance V = V = 0, f = 1.0kHz 30 Ω ds(on) DS GS C Input Capacitance V = 0, V = 12V, f = 1.0MHz 10 pF iss DS GS C Reverse Transfer Capacitance V = 0V, V = 12V, f = 1.0MHz 4.0 pF rss DS GS Switching Characteristics t Trun On Delay Time V = 10V, V = 0 4.0 ns d(on) DD GS(on) V = -12, I = 12mA t Rise Time GS(off) D(on) 5.0 ns r R = 50Ω G t Trun Off Delay Time 5.0 ns d(off) t Fall Time 10 ns f * Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1.0% Thermal Characteristics T =25°C unless otherwise noted A Symbol Parameter Max. Units P Total Device Dissipation 350 mW D Derate above 25°C 2.8 mW/°C R Thermal Resistance, Junction to Case 125 °C/W θJC R Thermal Resistance, Junction to Ambient 357 °C/W θJA ©2002 Rev. A, June 2002
