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Partno	Mfg	Dc	Qty	Available	Descript
2N5631		N/a	2	avai	Silicon N-P-N epitaxial-base high-power transistor. 140V, 200W.

2N5631 ,Silicon N-P-N epitaxial-base high-power transistor. 140V, 200W.Order this document**by 2N5630/DSEMICONDUCTOR TECHNICAL DATA * * *. . . designed for use in high p ..
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2N5631
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits
-.. designed for use in high power audio amplifier applications and high voltageswitching regulator circuits. High Collector Emitter Sustaining Voltage —
VCEO(sus) = 120 Vdc — 2N5630, 2N6030
VCEO(sus) = 140 Vdc — 2N5631, 2N6031 High DC Current Gain — @ IC = 8.0 Adc
hFE = 20 (Min) — 2N5630, 2N6030
hFE = 15 (Min) — 2N5631, 2N6031 Low Collector–Emitter Saturation Voltage —
VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc
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(1) Indicates JEDEC Registered Data.
2000 20 40 60 80 100 120 140 200
Figure 1. Power Derating
TC, TEMPERATURE (°C)
, POWER DISSIP
TION (W
TTS)
160 180

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