2N5564 ,Trans JFET N-CH 6-Pin TO-71S-04031—Rev. D, 04-Jun-018-12N5564/5565/5566Vishay Siliconix ..
2N5566 ,Trans JFET N-CH 6-Pin TO-71S-04031—Rev. D, 04-Jun-018-3r rDS(on) DS(on)g – Forward Transconductance (mS) – Drain-Source On-Res ..
2N5631 ,Silicon N-P-N epitaxial-base high-power transistor. 140V, 200W.Order this document**by 2N5630/DSEMICONDUCTOR TECHNICAL DATA * * *. . . designed for use in high p ..
2N5637 ,Conductor Products, Inc. - BIPOLAR NPN UHF/MICROWAVE TRANSISTOR
2N5638 ,N-Channel Switchapplications involving pulsed or low duty cycle operations.
2N5638 ,N-Channel SwitchELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
2SC2824 ,SILICON NPN EPITAXIAL TYPE(PCT PROCESS)TOSHIBA tIyTSCRETE/0PT()1ft097250 TOSHIBA (D I SCRETE/OPTO)SILICON NPN EPITAXIALTYPE (PCT PROCESS)1 ..
2SC2833 ,Si NPN triple diffused. High speed switching.Absolute Maximum Ratings (Ta=25°C)T'"-'-Unit 1 mmHe; . 15.5max. 4.7-H 13 5 ' . max.I . max.3. l11.0 ..
2SC2845 ,SILICON NPN EPITAXIAL PLANARPANASONIC INl)L/ELEKCiHiihI+ 7iilC I) IEEIBEBSLI unmeaa aI-#57929pI,"Si-ln2SC28452$C2845' U a V NPN ..
2SC2851 ,Transistors (Selection Guide by Applications and Functions)Wuan-eDem.l Transistors (Selection Guide by
2SC2856 , Silicon NPN Epitaxial
2SC2857 ,NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2N5564-2N5566
Trans JFET N-CH 6-Pin TO-71
2N5564/5565/5566
Vishay Siliconix
Matched N-Channel JFET Pairs�������� �������� ������������ Two-Chip Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: 3 pA Low Noise: 12 nV⁄√Hz @ 10 Hz Good CMRR: 76 dB Minimum Parasitics Tight Differential Match vs. Current Improved Op Amp Speed, Settling Time
Accuracy Minimum Input Error/Trimming Requirement Insignificant Signal Loss/Error Voltage High System Sensitivity Minimum Error with Large Input Signals Maximum High Frequency Performance Wideband Differential Amps High-Speed,
Temp-Compensated,
Single-Ended Input Amps High-Speed Comparators Impedance Converters Matched Switches
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The 2N5564/5565/5566 are matched pairs of JFETs mounted
in a TO-71 package. This two-chip design reduces parasitics
for good performance at high frequency while ensuring
extremely tight matching. This series features high
breakdown voltage (V(BR)DSS typically > 55 V), high gain
(typically > 9 mS), and <5 mV offset between the two die.
The hermetically-sealed TO-71 package is available with full
military processing (see Military Information).
For similar products see the low-noise U/SST401 series, and
the low-leakage 2N5196/5197/5198/5199 data sheets.
TO-71Top View
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Gate-Drain, Gate-Source Voltage –40 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate-Gate Voltage �80 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current 50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature –55 to 150�C. . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation : Per Sidea 325 mW. . . . . . . . . . . . . . . . . . . . . . . .
Totalb 650 mW. . . . . . . . . . . . . . . . . . . . . . . . . . .
