2N5555 ,Leaded JFET General Purpose
2N5555 ,Leaded JFET General Purpose
2N5555 ,Leaded JFET General Purpose
2N5564 ,Trans JFET N-CH 6-Pin TO-71S-04031—Rev. D, 04-Jun-018-12N5564/5565/5566Vishay Siliconix ..
2N5566 ,Trans JFET N-CH 6-Pin TO-71S-04031—Rev. D, 04-Jun-018-3r rDS(on) DS(on)g – Forward Transconductance (mS) – Drain-Source On-Res ..
2N5631 ,Silicon N-P-N epitaxial-base high-power transistor. 140V, 200W.Order this document**by 2N5630/DSEMICONDUCTOR TECHNICAL DATA * * *. . . designed for use in high p ..
2SC2824 ,SILICON NPN EPITAXIAL TYPE(PCT PROCESS)TOSHIBA tIyTSCRETE/0PT()1ft097250 TOSHIBA (D I SCRETE/OPTO)SILICON NPN EPITAXIALTYPE (PCT PROCESS)1 ..
2SC2833 ,Si NPN triple diffused. High speed switching.Absolute Maximum Ratings (Ta=25°C)T'"-'-Unit 1 mmHe; . 15.5max. 4.7-H 13 5 ' . max.I . max.3. l11.0 ..
2SC2845 ,SILICON NPN EPITAXIAL PLANARPANASONIC INl)L/ELEKCiHiihI+ 7iilC I) IEEIBEBSLI unmeaa aI-#57929pI,"Si-ln2SC28452$C2845' U a V NPN ..
2SC2851 ,Transistors (Selection Guide by Applications and Functions)Wuan-eDem.l Transistors (Selection Guide by
2SC2856 , Silicon NPN Epitaxial
2SC2857 ,NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2N5555
Leaded JFET General Purpose
