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2N5486
N-Channel JFET High Frequency Amplifier
VISHAY
2NISST5484 Series
N-Channel JFETs
Vishay Siliconix
2N5484 SST5484
2N5485 SST5485
2N5486 SST5486
PRODUCT SUMMARY
Part Number VGS(off) (V) V(BR)Gss Min (V) gfs Min (mS) loss Min (mA)
2N/SST5484 -0.3 to -3 -25 3
2N/SST5485 AJ.5 to -4 -25 3.5
2N/SST5486 -2 to -6 -25 4
FEATURES BENEFITS APPLICATIONS
q Excellent High-Frequency Gain: . VWdeband High Gain q High-Frequency Ampliher/Mixer
Gps 13 dB (typ) @ 400 MHz - 5485/6 Very High System Sensitivity Oscillator
q Very Low Noise: 2.5 dB (typ) @
400 MHz - 5485/6
. Very Low Distortion
0 High AC/DC Switch Off-Isolation
DESCRIPTION
The 2N/SST5484 series consists of n-channel JFETs
designed
to provide high-performance amplihcation,
especially at high frequencies up to and beyond 400 MHz.
TO-226AA
(T0-92)
Top View
2N5484
2N5485
2N5486
For applications information see AN102 and AN105.
High Quality of Amplification
High-Speed Switching Capability
High Low-Level Signal Amplfcation
Sample-and-Hold
Very Low Capacitance Switches
The 2N series, TO-226AA (TO-92), and SST series, TO-236
(SOT-23), packages provide low-cost options and are
available with tape-and-reel to support automated assembly
(see Packaging Information).
TO-236
(SOT-23
Top View
SST5484 (H4)*
SST5485 (H5)*
SST5486 (H6)*
*Marking Code for TO-236
Document Number: 70246
S-04028-Rev. E, 04-Jun-01
www.vishaycom
2N/SST5484 Series
VISHAY
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage .._....._....._....._.......... -25 V Operating Junction Temperature A......................... -55 to 150''C
Gate Current ................................................ 10 mA Power Dissipationa tttttttttttttttttttttttttttttttttttt 350 mW
Lead Temperature _........................................... 300°C Notes
Storage Temperature ................................. -65 to 150°C a. Derate 2.8 mW/°C above 25°C
SPECIFICATIONS FOR 2N SERIES (TA = 25°C UNLESS OTHERWISE NOTED)
Limits
2N5484 2N5485 2N5486
Parameter Symbol Test Conditions Typa Min Max Min Max Min Max Unit
Static
Gate-Source - -
Breakdown Voltage V(BR)GSS IG - -1 “A ' VDS - 0 V -35 -25 -25 -25 V
Gate-Source Cutoff Voltage 1/Gsoit) VDs = 15 V, ID = 10 nA Ah3 -3 AJ.5 -4 -2 -6
Saturation Drain Currentb loss VDS = 15 V, VGS = 0 V 1 5 4 10 8 20 mA
VGS = -20 v, Vos = o v -0.002 -1 -1 -1
Gate Reverse Current I nA
GSS TA = 100°C -0.2 -200 -200 -200
Gate Operating Currentc IG VDG = 10 V, ID = 1 mA -20 pA
Gate-Source - -
Forward Voltagec VGS(F) ks - 10 mA , Vos - 0 V 0.8 V
Dynamic
Common-Source
Forward Transconductancdo gfs VDs = 15 V, VGS = 0 V 3 6 3.5 7 4 8 mS
Common-Source f= 1 kHz
Output Conductanceb gos 50 60 75 ”8
Common-Source
Input Capacitance Ciss 2.2 5 5 5
Common-Source I/os = 15 V, VGS - O V
Reverse Transfer Capacitance Crss f= MHz 0.7 1 1 1 pF
Common-Source
Output Capacitance Coss 1 2 2 2
Equivalent Input 5 Vros = 15 V, VGS = 0 V 10 n!
Noise Voltagec n f= 100 Hz (H-z
High-Frequency
Common-Source Y f-- 100 MHz 5.5 2.5 ms
Transconductance ft(RE) f= 400 MHz 5.5 3 3.5
Common-Source Y VDs = 15 V f= 100 MHz 45 75 uS
Output Conductance os(RE) VGS = O V f-- 400 MHz 65 100 100 '
Common-Source Y; f= 100 MHz 0.05 0.1 ms
Input Conductance is(RE) f= 400 MHz 0.8 1 1
VDS=15V, ID=1rnA
f= 100 MHz 20 16 25
Common-Source Power Gain Gps f-- 100 MHz 21 18 30 18 30
Vias = 15 v
lcr=4mA f=400MHz 13 IO 20 IO 20
Vos-- 15V, VGS=0V
RG=1MC2,f=1kHz 0.3 2.5 2.5 2.5 dB
VDs=15V,lD=1rnA 2 3
Noise Figure NF RG = 1 KO, f= 100 MHz
VDS=15V f=100MHz 1 2 2
b = 4 mA
Rs =1 k9 f= 400 MHz 2.5 4 4
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Document Number: 70246
S-04028-Reu E, 04-Jun-01
VISHAY
2NISST5484 Series
Vishay Siliconix
SPECIFICATIONS FOR SST SERIES (TA = 25°C UNLESS OTHERWISE NOTED)
Limits
SST5484 SST5485 SST5486
Parameter Symbol Test Conditions Typb Min Max Min Max Min Max Unit
Static
Gate-Source - -
Breakdown Voltage V(BR)GSS ks - -1 “A , VDS - 0 V -35 -25 -25 -25 V
Gate-Source Cutoff Voltage Vss(oir) VDs = 15 V, ID = 10 nA -0.3 -3 -0.5 -4 -2 -6
Saturation Drain Currentb IDSS Vos = 15 V, VGS = 0 V 1 5 4 10 8 20 mA
N/ss = -20 V, VDS = 0 V -0.002 -1 -1 -1
Gat R s C t I A
e ever e urren GSS TA = 100°C -0.2 -200 -200 -200 n
Gate Operating Currentc IG VDG = 10 V, b = 1 mA -20 pA
Gate-Source - -
Forward Voltagec VGS(F) ks - 10 mA , VDS - 0 V 0.8 V
Dynamic
Common-Source
ge, 3 6 3.5 7 4 8 mS
Forward Transconductancdo VDS = 1 5 hhis = O V
Common-Source = E
Output Conductance" gos 50 60 75 ws
Common-Source
Input Capacitance Ciss 2.2
Common-Source - -
Reverse Transfer Crss VDS =fyiittzis - 0 V 0.7 pF
Capacitance - E
Common-Source C 1
Output Capacitance oss
Equivalent Input 5 VDS = 15 V, VGS = 0 V 10 n1
Noise Voltages n f = 100 Hz \IHz
High-Frequency
Common-Source Y f= 100 MHz 5.5 mS
Transconductance fs f= 400 MHz 5.5
Common-Source Y VDs = 15 V f-- 100 MHz 45 S
Output Conductance os I/ss = O V f-- 400 MHz 65 u
Common-Source Y- t = 100 MHz 0.05 ms
Input Conductance IS f= 400 MHz 0.8
N/os=15VID--lmA 20
f= 100 MHz
Common-Source G
Power Gain PS Vos = 15 V f= 100 MHz 21
ID=4mA f=400 MHz 13
VDS=15V, VGS=OV
RG=1MQ,f=1kHz 0.3 dB
VDS=15V,|D=1mA 2
Noise Figure NF Rs =1 k9. f= 100 MHz
VDS=15V f=100MHz 1
ID = 4 mA
RG=1kQ f=400 MHz 2.5
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NH
b. Pulse test: PW 5300 us duty cycle s3%.
c. This parameter not registered with JEDEC.
Document Number: 70246
S-04028-Reu. E, 04-Jun-01
www.vishaycom
2N/SST5484 Series
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
loss — Saturation Drain Current (mA)
100 nA
100 pA
IG — Gate Leakage
0.1 pA
ID— Drain Current(
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
s,,/''''
Iross@Vros--10VVss=0V
gts@VDs=10V,VGs=0V
f=1kHz
-4 -6 -8
Vsseom - Gate-Source Cutoff Voltage (V)
Gate Leakage Current
lro=5rroA
ImAl I/y?
llllllll
l llllllll llllllll
TA-- 125"C
0.1 mA
llllllll
llllllll
llllllll
less @ 25°C
Vos - Drain-Gate Voltage (V)
Output Characteristics
VGS(off) = -2 V
VGS=0V
-0.4 V
-0.8 V
-1.0 V
-1.2 V
Vos - Drain-Source Voltage (V)
(gm) aauepnpuoosueu pJeMJOj — ‘16
rDS(on) — Drain—Source On—Resistance ( Q)
gfs — Fon/vard Transconductance (m8)
ID — Drain Current(
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
500 l l l 100
rros@lc)--1mA,Vss=0V
gos@Vos=10V,VGs=0V no
400 f= 1 kHz - 80 8
300 rros d 60 E.
200 40 a
100 wp''" _--- 20
o -2 -4 -6 -8 -10
GS(off) - Gate-Source Cutoff Voltage (V)
Common-Source Forward
Transconductance vs. Drain Current
10 I lllll IIIIII
Vssom = -3 v Vos = 10 v
f= 1 kHz
= - o I
6 T 55 C 1’
25°C ///
4 Jie, I
r"//125°c
/ eg',-"-''
err..'',',','.''':,--,:',','''''
0 1 10
ID - Drain Current (mA)
Output Characteristics
VGS(0ff) = -3 V
0 2 4 6 8
Vos - Drain-Source Voltage (V)
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Document Number: 70246
S-04028-Reu E, 04-Jun-01
VISHAY
2NISST5484 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
Transfer Characteristics
10 I I I
VGS(off) = -2 V Vos = 10 V
a? TA = -55''C
E 6 25 C
E "iiiiiii,,f,v,
g 4 125"C 'Yo.
0 "its:is,,s
0 -0.4 -0.8 -1.2 -1.6
VGS - Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage
10 I I I
Vssom = -2 v Vos = 10 v
A f= 1 kHz
2 T = -55''C
E 6 25°C
ts 4 - 125°C "s.
, 'ss?)
I 2 'sRPtlt,
0 -0.4 -0.8 -1.2 -1.6
I/ss - Gate-Source Voltage (V)
On-Resistance vs. Drain Current
300 I l
A TA = 25°C /
t; 240 I
ii VGsom = -2 V /
a; 180 l
g -3 v
ID - Drain Current (mA)
ID — Drain Current (mA)
gfs — Forward Transconductance (mS)
AV — Voltage Gain
Transfer Characteristics
10 I I I
VGS(off) = -3 V Vos = 10 V
8 )ss, TA: -55t
I 25°C
'''se:iirct
0 -0.6 -1.2 -1.8 -2.4 -3
VGS - Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage
10 I I I
Vssom = -3 v I/rss = 10 v
f=1kHz
ssdA=-55c'C
2 ”5°C\§\s
'c?2t)ii):
0 -0.6 -1.2 -1.8 -2.4 -3
N/ss - Gate-Source Voltage (V)
Circuit Voltage Gain vs. Drain Current
100 IIIIIIII I IIIIII
gfs RL
Av = 1+-R,a,,, + RLgOS
80 Assume VDD=15V,VD3=5V -
\ RL = Ir,
60 N -
N?s Vtss(or)=-2V
20 IIV\
-3V "'''CQttts,
ll “===:
0.1 1 10
ID - Drain Current (mA)
Document Number: 70246
S-04028-Reu. E, 04-Jun-01
www.vishaycom
2N/SST5484 Series VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
Common-Source Input Capacitance Common-Source Reverse Feedback
vs. Gate-Source Voltage Capacitance vs. Gate-Source Voltage
5 l 3 l
f= 1 MHz C" f= 1 MHz
4 ' 2.4
C? l (u
m tD l
li. 3 3 1.8
8 Vros = 0 V io' Vos = o v
fd 2 ' 8 1 2
CT "s. I . 's
E "''''''ssc::rr-., g g
'm 10 v "'"'ci"C:i"ir.L_, 2
.2 a) 10 v
0 1 , 0.6
0 -4 -8 -12 -16 -20 0 -4 -8 -12 -16 -20
Vas - Gate-Source Voltage (V) Vas - Gate-Source Voltage (V)
Input Admittance Forward Admittance
TA = 25°C
l/os = 15 V
VGS = 0 V
Common Source
TA = 25''C
I/os = 15 V
VGS = 0 V
Common Source
Fi" c7?
100 200 500 1000 100 200 500 1000
f - Frequency (MHz) t - Frequency (MHz)
Reverse Admittance Output Admittance
TA=25°C TA=25°C
VDS=15V VDS=15V
VGS=0V Vss=0V bos
Common Source Common Source
<73 Ch'"
0.1 0.1
0.01 0.01
100 200 500 1000 100 200 500 1000
f- Frequency (MHz) f- Frequency (MHz)
www.vishaycom Document Number: 70246
7-6 S-04028-Reu E, 04-Jun-01
VISHAY 2NISST5484 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
Equivalent Input Noise Voltage vs. Frequency 20 Output Conductance vs. Drain Current
IIIIIEII I III |Il|||_| Iltll I I I I II I I I I II
VGS(St) - -3 V VDS - 10 V VGS(oit) = -3 V (yi 11110 V
A I - Z
LE l a; l er....-
"s, \ g TA---551 ct';':',?:',':'':''.':':
v: 12 a 12 J? '5egl'-'
g, l 13 / ,I
g N E tlk
g i. o ///
o 8 \ g 8 / // 25''C
.9 , 3 r f
tD _ N 9 2f
, N, 'ss 8 125°C
Ji 's "ss. ID = 5 mA Iw /
4 "sm,, - mo 4 p5
.\~___ f'"
b = bss
o l l l l I ll” 0
10 100 1k 10k 100k 0.1 1 10
f- Frequency (Hz) ID - Drain Current (mA)
Document Number: 70246 www.vishaycom
S-04028-Reu. E, 04-Jun-01 7-7
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