2N5485 ,N-Channel JFET High Frequency Amplifier
2N5485 ,N-Channel JFET High Frequency Amplifier
2N5485 ,N-Channel JFET High Frequency Amplifier
2N5486 ,N-Channel JFET High Frequency AmplifierS-04028—Rev. E, 04-Jun-017-3gos – Output Conductance ( S)g – Forward Transconductance (mS)fs2N/SST5 ..
2N5488 ,Conductor Products, Inc. - IC=5.0AMPS
2N5496 ,Conductor Products, Inc. - SILICON N-P-N TRANSISTORS
2SC2792 ,Silicon NPN Power Transistors TO-3P(I) packageELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SC2792 ,Silicon NPN Power Transistors TO-3P(I) packageapplications (computer, personal equipment, office equipment, measuring equipment, industrialroboti ..
2SC2793 ,Silicon NPN Power Transistors MT-200 packageSILICON NPN TRIPLE DIFFUSED TYPE2 PP IC TIONHIGH SPEED AND HIGH VOLTAGE SWITCHING
2SC2810 , Silicon NPN Power Transistors
2SC2810 , Silicon NPN Power Transistors
2SC2810. , Silicon NPN Power Transistors
2N5485
N-Channel JFET High Frequency Amplifier
2N5484 / 5485 / 5486 / MMBF5484 / 5485 / 5486 2N5484 MMBF5484 2N5485 MMBF5485 MMBF5486 2N5486 G S G TO-92 S SOT-23 D D Mark: 6B / 6M / 6H NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed primarily for electronic switching applications such as low On Resistance analog switching. Sourced from Process 50. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Drain-Gate Voltage 25 V DG V Gate-Source Voltage - 25 V GS I Forward Gate Current 10 mA GF Operating and Storage Junction Temperature Range -55 to +150 T ,T °C J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units 2N5484-5486 *MMBF5484-5486 P Total Device Dissipation 350 225 mW D 2.8 1.8 Derate above 25°C mW/°C R Thermal Resistance, Junction to Case 125 °C/W θJC Thermal Resistance, Junction to Ambient 357 556 R °C/W θJA *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 1997
