2N5462 ,Leaded JFET General Purpose
2N5462 ,Leaded JFET General Purpose
2N5462 ,Leaded JFET General Purpose
2N5463 , N-CHANNEL JFET
2N5484 ,N-Channel JFET High Frequency Amplifier
2N5484 ,N-Channel JFET High Frequency Amplifier
2SC2786 ,NPN SILICON TRANSISTORFEATURES q High gain bandwidth product (fT = 600 MHz TYP.) io.yistlili., (053.5%,
. Small output c ..
2SC2786 ,NPN SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 °c)
SYMBOL CHARACTERISTIC MIN. TYP. MAX. UNIT TEST CONDITIONS
..
2SC2787 ,NPN SILICON TRANSISTORFEATURES .0 Small output capacitance (Cob = 1.9 pF TYP.) ah2sstyi.) (0.356%?)6.)
q Low noise figur ..
2SC2792 ,Silicon NPN Power Transistors TO-3P(I) packageELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SC2792 ,Silicon NPN Power Transistors TO-3P(I) packageapplications (computer, personal equipment, office equipment, measuring equipment, industrialroboti ..
2SC2793 ,Silicon NPN Power Transistors MT-200 packageSILICON NPN TRIPLE DIFFUSED TYPE2 PP IC TIONHIGH SPEED AND HIGH VOLTAGE SWITCHING
2N5462
Leaded JFET General Purpose
2N5460 / 5461 / 5462 / MMBF5460 / MMBF5461 / MMBF5462 2N5460 MMBF5460 2N5461 MMBF5461 MMBF5462 2N5462 G S G TO-92 D SOT-23 NOTE: Source & Drain S are interchangeable Mark: 6E / 61U / 61V D P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89. Absolute Maximum Ratings* TA = 25°C unless otherwise noted - Symbol Parameter Value Units V Drain-Gate Voltage - 40 V DG V Gate-Source Voltage 40 V GS I Forward Gate Current 10 mA GF Operating and Storage Junction Temperature Range -55 to +150 °C T ,T J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units 2N5460-5462 *MMBF5460-5462 P Total Device Dissipation 350 225 mW D 2.8 1.8 Derate above 25°C mW/°C R Thermal Resistance, Junction to Case 125 °C/W θJC Thermal Resistance, Junction to Ambient 357 556 R °C/W θJA *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 2N5460/5461/5462/MMBF5460/5461/5462, Rev A 2001
