2N5459 ,N-Channel JFET General Purpose Amplifier/Switch
2N5459 ,N-Channel JFET General Purpose Amplifier/Switch
2N5459 ,N-Channel JFET General Purpose Amplifier/Switch
2N5460 ,Leaded JFET General PurposeS-04030—Rev. D, 04-Jun-019-2g – Output Conductance ( S)osg – Forward Transconductance (mS)fs2N/SST ..
2N5461 ,Leaded JFET General PurposeS-04030—Rev. D, 04-Jun-019-4r – Drain-Source On-Resistance ( Ω ) I – Drain Current (mA)g – Forward ..
2N5461RLRA ,Small Signal JFET P-ChannelMAXIMUM RATINGS3Rating Symbol Value UnitGATEDrain − Gate Voltage V 40 VdcDGReverse Gate − Source Vo ..
2SC2780 ,NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDFEATURES .
PAtii,Kt,ei5,,ee,eitli',eNs 0 World Standard Miniature Package
I
I Sli :SOT--89
. 4. ..
2SC2780-T1 ,Silicon transistorFEATURES .
PAtii,Kt,ei5,,ee,eitli',eNs 0 World Standard Miniature Package
I
I Sli :SOT--89
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2SC2784 ,NPN SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 °c)
SYMBOL
CHARACTERISTIC TYP. MAX. UNIT
DC Current Ga ..
2SC2785 ,NPN SILICON TRANSISTORFEATURES . High Voltage VCEO : 50 v MIN. (0.1-55%., (0,8326%qu
0 Excellent hFE Linearity : 0.92 TY ..
2SC2786 ,NPN SILICON TRANSISTORFEATURES q High gain bandwidth product (fT = 600 MHz TYP.) io.yistlili., (053.5%,
. Small output c ..
2SC2786 ,NPN SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 °c)
SYMBOL CHARACTERISTIC MIN. TYP. MAX. UNIT TEST CONDITIONS
..
2N5459
N-Channel JFET General Purpose Amplifier/Switch
2N5457 / 5458 / 5459 / MMBF5457 / 5458 / 5459 2N5457 MMBF5457 2N5458 MMBF5458 MMBF5459 2N5459 G S TO-92 G S SOT-23 NOTE: Source & Drain D D are interchangeable Mark: 6D / 61S / 6L N-Channel General Purpose Amplifier This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from Process 55. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Drain-Gate Voltage 25 V DG V Gate-Source Voltage - 25 V GS I Forward Gate Current 10 mA GF T , T Operating and Storage Junction Temperature Range -55 to +150 °C stg J *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units 2N5457-5459 *MMBF5457-5459 P Total Device Dissipation 625 350 mW D 5.0 2.8 Derate above 25°C mW/°C R Thermal Resistance, Junction to Case 125 °C/W θJC Thermal Resistance, Junction to Ambient 357 556 R °C/W θJA *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 1997
