2N5401G ,Amplifier Transistor(PNP Silicon)ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
2N5401RLRAG ,Amplifier TransistorsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
2N5401S , EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, HIGH VOLTAGE)
2N5415 ,HIGH VOLTAGE AMPLIFIERS2N54152N5416®SILICON PNP TRANSISTORS■ STMicroelectronics PREFERREDSALESTYPES■ PNP TRANSISTORSDESCRI ..
2N5416 ,HIGH VOLTAGE AMPLIFIERSFAIRCHILD SEMICONDUCTOR
3469674 FAIRCHILD SEMICONDUCTOR
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FAIRCHILD
Il8lle ..
2N5432 ,N-channel JFET switch.G E SOLID STATE . " DEI36?5E|E:L (l0hl3T'i5 “i I
3875081 G E SOLID STATE
2N5432-2N5434
N-Cha ..
2SC2757 , isc Silicon NPN RF Transistor
2SC2767 ,Conductor Products, Inc. - BIPOLAR TRANSISSTORS RATINGS AND SPECIFICATIONS
2SC2767 ,Conductor Products, Inc. - BIPOLAR TRANSISSTORS RATINGS AND SPECIFICATIONS
2SC2768 ,TRIPLE DIFFUSED PLANER TYPE HIGH SPEED SWITCHINGApplications
_ _ 2.54 ai-U 7
.A(/ryrrtAci-e Switching regulators mam
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2SC2776 , Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V
2SC2778 ,Small-signal deviceFeatures3• Optimum for RF amplification, oscillation, mixing, and IF ofFM/AM radios• Mini type pack ..
2N5401G
Amplifier Transistor(PNP Silicon)
-
PNP Silicon
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
OFF CHARACTERISTICS Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%.
COLLECTOR
BASE
EMITTER
