2N5401 ,PNP Silicon Transistor (General purpose amplifier High voltage application)THERMAL CHARACTERISTICSYWWCharacteristic Symbol Max UnitThermal Resistance, R 200 °C/WJAJunction−t ..
2N5401G ,Amplifier Transistor(PNP Silicon)ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
2N5401RLRAG ,Amplifier TransistorsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
2N5401S , EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, HIGH VOLTAGE)
2N5415 ,HIGH VOLTAGE AMPLIFIERS2N54152N5416®SILICON PNP TRANSISTORS■ STMicroelectronics PREFERREDSALESTYPES■ PNP TRANSISTORSDESCRI ..
2N5416 ,HIGH VOLTAGE AMPLIFIERSFAIRCHILD SEMICONDUCTOR
3469674 FAIRCHILD SEMICONDUCTOR
-lltlriltmtNi-lei-
FAIRCHILD
Il8lle ..
2SC2740 , Si NPN Triple Diffused Junction Mesa
2SC2749 , Silicon NPN Power Transistors
2SC2750 , High Speed High Current Switching Industrial Use
2SC2752 ,NPN SILICON POWER TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 oC)
SYMBOL
hFE1'
ton
tstg
tf
VECO(sus)
VCEX(su ..
2SC2753 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Application2SC2753 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2753 VHF~UHF Band Low Noise Amp ..
2SC2757 , isc Silicon NPN RF Transistor
2N5401
Small Signal Amplifier PNP
2N5401
Preferred DeviceAmplifier T ransistors
PNP Silicon
Features Pb−Free Packages are Available*
MAXIMUM RATINGSMaximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not nor-
mal operating conditions) and are not valid simultaneously. If these limits are ex-
ceeded, device functional operation is not implied, damage may occur and reli-
ability may be affected.
THERMAL CHARACTERISTICS
