2N5400RA ,PNP General Purpose Amplifier2N54002N5400C TO-92BEPNP General Purpose AmplifierThis device is designed for use as general purpos ..
2N5401 ,PNP Silicon Transistor (General purpose amplifier High voltage application)THERMAL CHARACTERISTICSYWWCharacteristic Symbol Max UnitThermal Resistance, R 200 °C/WJAJunction−t ..
2N5401G ,Amplifier Transistor(PNP Silicon)ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
2N5401RLRAG ,Amplifier TransistorsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
2N5401S , EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, HIGH VOLTAGE)
2N5415 ,HIGH VOLTAGE AMPLIFIERS2N54152N5416®SILICON PNP TRANSISTORS■ STMicroelectronics PREFERREDSALESTYPES■ PNP TRANSISTORSDESCRI ..
2SC2740 , Si NPN Triple Diffused Junction Mesa
2SC2749 , Silicon NPN Power Transistors
2SC2750 , High Speed High Current Switching Industrial Use
2SC2752 ,NPN SILICON POWER TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 oC)
SYMBOL
hFE1'
ton
tstg
tf
VECO(sus)
VCEX(su ..
2SC2753 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Application2SC2753 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2753 VHF~UHF Band Low Noise Amp ..
2SC2757 , isc Silicon NPN RF Transistor
2N5400RA
PNP General Purpose Amplifier
2N5400 2N5400 C TO-92 B E PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring high voltages. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 120 V CEO V Collector-Base Voltage 130 V CBO V Emitter-Base Voltage 5.0 V EBO I Collector Current - Continuous 600 mA C Operating and Storage Junction Temperature Range -55 to +150 T , T °C J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units 2N5400 P Total Device Dissipation 625 mW D Derate above 25°C 5.0 mW/°C R Thermal Resistance, Junction to Case 83.3 C/W θ ° JC R Thermal Resistance, Junction to Ambient 200 °C/W θJA 2001 2N5400, Rev A
