2N5307 ,NPN General Purpose Amplifierapplications involving pulsed or low duty cycle operations.2002 Fairchild Semiconductor Corporation ..
2N5307 ,NPN General Purpose Amplifierapplications requiring extremely high current gain at currents to 1.0A.• Sourced from Process 05.• ..
2N5334 , Bipolar NPN Device in a Hermetically sealed TO39 Metal Package
2N5336 ,NPN SILICON TRANSISTORELECTRICAL CHARACTERISTICS (25° C Ambient Temperature unless otherwise noted) (Note 6)
SYMBOL CH ..
2N5365 ,Conductor Products, Inc. - SPRINGFIELD, NEW JERSEY 07091
2N5365 ,Conductor Products, Inc. - SPRINGFIELD, NEW JERSEY 07091
2SC2735JTL-E , Silicon NPN Epitaxial
2SC2736 , Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V
2SC2740 , Si NPN Triple Diffused Junction Mesa
2SC2749 , Silicon NPN Power Transistors
2SC2750 , High Speed High Current Switching Industrial Use
2SC2752 ,NPN SILICON POWER TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 oC)
SYMBOL
hFE1'
ton
tstg
tf
VECO(sus)
VCEX(su ..
2N5307
NPN General Purpose Amplifier
2N5307 2N5307 NPN General Purpose Amplifier • This device designed for applications requiring extremely high current gain at currents to 1.0A. • Sourced from Process 05. • See MPSA14 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Emitter Voltage 40 V CEO V Collector-Base Voltage 40 V CBO V Emitter-Base Voltage 12 V EBO I Collector Current - Continuous 1.2 A C T , T Operating and Storage Junction Temperature Range -55 ~ +150 °C J ST * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. ©2002 Rev. B, July 2002
