2N5246 ,N-Channel RF Amplifierapplications where process 50is not adequate. Sufficient gain and low noise for sensitive receivers ..
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2N5246
N-Channel RF Amplifier
2N5246 2N5246 N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where process 50is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from process 90. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Drain-Gate Voltage 30 V DG V Gate-Source Voltage -30 V GS I Forward Gate Current 10 mA GF T , T Operating and Storage Junction Temperature Range -55 ~ 150 °C J STG * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units Off Characteristics V Gate-Source Breakdwon Voltage I = 1.0μA, V = 0 -30 V (BR)GSS G DS I Gate Reverse Current V = 25V, V = 0 -1.0 nA GSS GS DS V Gate-Source Cutoff Voltage V = 15V, I = 1.0nA -0.5 -4.0 V GS(off) DS D On Characteristics I Zero-Gate Voltage Drain Current * V = 15V, V = 0 1.5 7.0 mA DSS DS GS Small Signal Characteristics gfs Forward Transferconductance V = 0V, V = 15V, f = 1.0kHz 3000 9500 μmhos GS DS goss Common- Source Output Conductance V = 0V, V = 15V, f = 1.0kHz 50 μmhos GS DS * Pulse Test: Pulse ≤ 300μs Thermal Characteristics T =25°C unless otherwise noted A Symbol Parameter Max. Units P Total Device Dissipation 350 mW D Derate above 25°C 2.8 mW/°C R Thermal Resistance, Junction to Case 125 °C/W θJC R Thermal Resistance, Junction to Ambient 357 °C/W θJA ©2003 Rev. A, October 2003
