2N5210TFR ,NPN General Purpose Amplifierapplications at collector currents from 1µ A to 50 mA.ECTO-92BEBSOT-23Mark: 3MAbsolute Maximum Rati ..
2N5223 ,Leaded Small Signal Transistor General PurposeELECTRICAL CHARACTERISTICS (25° C Ambient Temperature unless otherwise noted) (Note 6)
cm, Colle ..
2N5225 ,Leaded Small Signal Transistor General PurposeFAIRCHILD SEMICONDUCTOR
5L: otstuaniaru; DUE?5‘=lE 3 r
E 3469674 FAIRCHILD SEMICONDUCTOR BID ..
2N5227 ,Leaded Small Signal Transistor General PurposeELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) (Note 6)
__________ ..
2N5240 ,Conductor Products, Inc. - HIGH-VOLTAGE, SILICON N-P-N TRANSISTORS
2N5245 ,N-Channel RF Amplifierapplications where process 50is not adequate. Sufficient gain and low noise for sensitive receivers ..
2SC2721 ,Silicon transistorDATA SHEETSILICON TRANSISTOR2SC2721NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-FREQUENCY AMPLIF ..
2SC2721 ,Silicon transistorDATA SHEETSILICON TRANSISTOR2SC2721NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-FREQUENCY AMPLIF ..
2SC2735JTL-E , Silicon NPN Epitaxial
2SC2736 , Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V
2SC2740 , Si NPN Triple Diffused Junction Mesa
2SC2749 , Silicon NPN Power Transistors
2N5210TFR
NPN General Purpose Amplifier
2N5210/MMBT5210 2N5210/MMBT5210 NPN General Purpose Amplifier C This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1μA to 50 mA. E C TO-92 B E B SOT-23 Mark: 3M Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 50 V CEO V Collector-Base Voltage 50 V CBO V Emitter-Base Voltage 4.5 V EBO I Collector Current - Continuous 100 mA C Operating and Storage Junction Temperature Range -55 to +150 °C T , T J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Max. Symbol Characteristic Units 2N5210 MMBT5210 P Total Device Dissipation 625 350 mW D Derate above 25 C 5.0 2.8 mW/ C ° ° Thermal Resistance, Junction to Case 83.3 R °C/W θJC Thermal Resistance, Junction to Ambient 200 357 R °C/W θJA 2002 2N5210, Rev B
