2N5207 ,1200V 22A Phase Control SCR in a TO-208AA (TO-48) packageELECTRICAL SPECIFICATIONS
Max. average nn-state current
VRRM, VDHM -
Max. Rwatitiva Peak
..
2N5210RLRA ,Amplifier Transistor NPNELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
2N5210TFR ,NPN General Purpose Amplifierapplications at collector currents from 1µ A to 50 mA.ECTO-92BEBSOT-23Mark: 3MAbsolute Maximum Rati ..
2N5223 ,Leaded Small Signal Transistor General PurposeELECTRICAL CHARACTERISTICS (25° C Ambient Temperature unless otherwise noted) (Note 6)
cm, Colle ..
2N5225 ,Leaded Small Signal Transistor General PurposeFAIRCHILD SEMICONDUCTOR
5L: otstuaniaru; DUE?5‘=lE 3 r
E 3469674 FAIRCHILD SEMICONDUCTOR BID ..
2N5227 ,Leaded Small Signal Transistor General PurposeELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) (Note 6)
__________ ..
2SC2715 ,Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier ApplicationsApplications Unit: mm High power gain: Gpe = 2dB (typ.) (f = 10.7 MHz) Recommended for FM I ..
2SC2715 ,Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications2SC2715 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2715 High Frequen ..
2SC2721 ,Silicon transistorDATA SHEETSILICON TRANSISTOR2SC2721NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-FREQUENCY AMPLIF ..
2SC2721 ,Silicon transistorDATA SHEETSILICON TRANSISTOR2SC2721NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-FREQUENCY AMPLIF ..
2SC2735JTL-E , Silicon NPN Epitaxial
2SC2736 , Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V
2N5207-2N681
600V 22A Phase Control SCR in a TO-208AA (TO-48) package
INTE RNATIONAL. RECTI FIE FR
Data Sheet No. PD-3.081A
ENSB’H tiik EiilNlE7iiltDts1 SEQHES
ES and (EMS Amp EMS SEES
Major Ratings and Characteristics
VRRM, VDRM range
2N681-92 2N5204-07 Units
|T(RM$) 25 35 A
|T(AV] 16' 22' A
Q TC Am to 65" -40 to 40 oc
© 50 H2 145 285 A
© 60 Hz 150' 300''
o 50 Hz 103 410 2
@ so Hz 94 , 375 A S
IGT 40 40 mA
du/dt - loo. Vlus
di/dt 75-100 100 A/us
Ts -65 to125' -A0 m125' oc
25-800 600-1200 V
‘JEDEC registered ualue.
Description/Features
II General purpose stud mounted
II Broad forward and reverse
voltage range - through 1200 volts
tt Can be supplied to meet stringent
military, aerOSpace and other high-
reliability requirements
CASE STYLE AND DIMENSIONS
7.62 [0300!
585 102NI
11.50 (0.453)
1012(01122)
l 's 1/a.2auuF-2A
Conforms to JEDEC Outline TO-2OBAA (T048)
Dimensions in Millimeters and (Inches)
2N681 & 2N5204 Sariés
INTERNATIONAL RECTIFIER
VOLTAGE RATINGS (Applied gate. voltage zero or negative)
VRRM, VDRM - Max. Non Repetitive Peak
Max. Rapuitiva Peak Havana Voltage
Reverse and OffvState Voltage tp < 5 ms
Part Numbers Tg = 455°C ttt 125°C Tg " AitioC to 125°C
2N681 25' 35-
2N682 50' 75,
mass 100- 150.
2N685 200' 300'
2N687 300' 400'
2N688. 400’ 500'
2N689 500' 60tP
2N690 800' 720'
2N691 700' 84tP
2N692 800' 960'
To = 40°C m 1250C TJ = -400C to 125°C
2NS204 Boo 720
2NS205 800 960
2N5206 1000 1200
2N5207 1200 1440
ELECTRICAL SPECIFICATIONS
I 2N68t-92 l 2N5204-07 l Units I Conditions
ON-STATE
'T1RMS) Max. RMS onastate current 25 35 A
M . t te current 16. 22e A
tTi/SV) ax average or” a tr 180° ha" sine wave conduction
@ Tc = -65 to 65' -40 lo 4tP C
I Max. peak one cycle, new 50 Hz half cycle sine waw Following any rated
TSM repetitive surge current 145 285 or 6 ms rectangular pulse to'ad condition, and
150. 300. 60 Hz half cycle sine wave with rated VRRM 39'
A or 5 m: rectangular pulse plied following sum.
170 M0 50 Hz half cycle sine wave Same condition: a:
or 6 ms tactahguIer pulse above '"R' with
180 355 60 H1 half cycle sine wave VRHM applied ttttlow-
or 5 ms rectangular pulse ing sum " 0.
Pt Ma_x. A capability, for 103 410 A2 t _ 10 ms Rated VRRM applied following sum,
fusing 94 375 ' t = 3.3 m: initial T J " 125°C
.2: Max, 12: capability, for 145 580 A2 _ t " 10 ms VRRM " 0 following surge,
individual device fusing 135 530 i """'icis.tms- initial T, - 125oC.
P/t Max. IZV t ctpatilityfty 1450 5800 A2s/s- t " 0.1 to lthm initial TJ < 125°C
individual device fusing (i) VRRM following surge - o.
VTM Max. plak on-Mata voltage 2. 2 3' V T: " 25°C, *TlAV) " 16A (60A peak! 2N681,
. ITIAV) " 22A (70A peak) 2N5204
'H Mex. holding current 20 Q tsoct 200' Q "trot: mA Anode supply " 24V, initial 'r " 1.0A.
BLOCKI NG
dv/dt Min. critical ratmf~rin of t . T J " 125°C. Exponantial
off-stato voltage 100 100 to 10tht rated VDRM
2iiot 250 vas TJ = 125°C. Exponential Gate open circuned.
to 67% rated VDRM
'JEDEC Raaistsrad value.
CD Pt for time tx - IZW . s/tx.
t Typical
7- - - . ---r'tr-re"-ee.T5
