2N5197 ,Dual N-channel JFET general purpose amplifier.S-04031—Rev. D, 04-Jun-018-3g – Forward Transconductance (mS)fs2N5196/5197/5198/5199Vishay Siliconi ..
2N5197 ,Dual N-channel JFET general purpose amplifier.ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Gate Reverse Current
less
..
2N5198 ,Dual N-channel JFET general purpose amplifier.S-04031—Rev. D, 04-Jun-018-4I – Drain Current (mA) I – Drain Current (mA)D I – Saturation Drain Cur ..
2N5199 ,Dual N-channel JFET general purpose amplifier.2N5196/5197/5198/5199Vishay SiliconixMonolithic N-Channel JFET Duals Part Number V (V) ..
2N5199 ,Dual N-channel JFET general purpose amplifier.S-04031—Rev. D, 04-Jun-018-22N5196/5197/5198/5199Vishay Siliconix ..
2N5207 ,1200V 22A Phase Control SCR in a TO-208AA (TO-48) packageELECTRICAL SPECIFICATIONS
Max. average nn-state current
VRRM, VDHM -
Max. Rwatitiva Peak
..
2SC2715 ,Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier ApplicationsApplications Unit: mm High power gain: Gpe = 2dB (typ.) (f = 10.7 MHz) Recommended for FM I ..
2SC2715 ,Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications2SC2715 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2715 High Frequen ..
2SC2721 ,Silicon transistorDATA SHEETSILICON TRANSISTOR2SC2721NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-FREQUENCY AMPLIF ..
2SC2721 ,Silicon transistorDATA SHEETSILICON TRANSISTOR2SC2721NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-FREQUENCY AMPLIF ..
2SC2735JTL-E , Silicon NPN Epitaxial
2SC2736 , Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V
2N5197
