2N5196 ,Dual N-channel JFET general purpose amplifier.S-04031—Rev. D, 04-Jun-018-12N5196/5197/5198/5199Vishay Siliconix ..
2N5197 ,Dual N-channel JFET general purpose amplifier.S-04031—Rev. D, 04-Jun-018-3g – Forward Transconductance (mS)fs2N5196/5197/5198/5199Vishay Siliconi ..
2N5197 ,Dual N-channel JFET general purpose amplifier.ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Gate Reverse Current
less
..
2N5198 ,Dual N-channel JFET general purpose amplifier.S-04031—Rev. D, 04-Jun-018-4I – Drain Current (mA) I – Drain Current (mA)D I – Saturation Drain Cur ..
2N5199 ,Dual N-channel JFET general purpose amplifier.2N5196/5197/5198/5199Vishay SiliconixMonolithic N-Channel JFET Duals Part Number V (V) ..
2N5199 ,Dual N-channel JFET general purpose amplifier.S-04031—Rev. D, 04-Jun-018-22N5196/5197/5198/5199Vishay Siliconix ..
2SC2715 ,Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier ApplicationsApplications Unit: mm High power gain: Gpe = 2dB (typ.) (f = 10.7 MHz) Recommended for FM I ..
2SC2715 ,Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications2SC2715 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2715 High Frequen ..
2SC2721 ,Silicon transistorDATA SHEETSILICON TRANSISTOR2SC2721NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-FREQUENCY AMPLIF ..
2SC2721 ,Silicon transistorDATA SHEETSILICON TRANSISTOR2SC2721NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-FREQUENCY AMPLIF ..
2SC2735JTL-E , Silicon NPN Epitaxial
2SC2736 , Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V
2N5196-2N5197-2N5198-2N5199
Dual N-channel JFET general purpose amplifier.
2N5196/5197/5198/5199
Vishay Siliconix
Monolithic N-Channel JFET Duals�������� �������� ������������ Monolithic Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: 5 pA Low Noise High CMRR: 100 dB Tight Differential Match vs. Current Improved Op Amp Speed, Settling Time
Accuracy Minimum Input Error/Trimming Requirement Insignificant Signal Loss/Error Voltage High System Sensitivity Minimum Error with Large Input Signal Wideband Differential Amps High-Speed, Temp-Compensated,
Single-Ended Input Amps High Speed Comparators Impedance Converters
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The 2N5196/5197/5198/5199 JFET duals are designed for
high-performance differential amplification for a wide range of
precision test instrumentation applications. This series
features tightly matched specs, low gate leakage for accuracy,
and wide dynamic range with IG guaranteed at VDG = 20 V.
The hermetically-sealed TO-71 package is available with full
military processing (see Military Information and the
2N5545/5546/5547JANTX/JANTXV data sheet).
For similar products see the low-noise U/SST401 series, the
high-gain 2N5911/5912, and the low-leakage U421/423 data
sheets.
TO-71Top View
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Gate-Drain, Gate-Source Voltage –50 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current 50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation : Per Sidea 250 mW. . . . . . . . . . . . . . . . . . . . . . . .
Totalb 500 mW. . . . . . . . . . . . . . . . . . . . . . . . . . .
