2N5195 ,Leaded Power Transistor General PurposeAPPLICATIONS ■ LINEAR AND SWITCHING INDUSTRIALEQ ..
2N5195 ,Leaded Power Transistor General Purpose3I , COLLECTOR CURRENT (A) μCVOLTAGE (VOLTS)θ , TEMPERATURE COEFFICIENTS (mV/ ° C), EXTERNAL BASE ..
2N5195 ,Leaded Power Transistor General Purpose2N5195®MEDIUM POWER PNP SILICON TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPE ■ PNP TRANSISTOR
2N5195G , Silicon PNP Power Transistors
2N5196 ,Dual N-channel JFET general purpose amplifier.S-04031—Rev. D, 04-Jun-018-12N5196/5197/5198/5199Vishay Siliconix ..
2N5197 ,Dual N-channel JFET general purpose amplifier.S-04031—Rev. D, 04-Jun-018-3g – Forward Transconductance (mS)fs2N5196/5197/5198/5199Vishay Siliconi ..
2SC2715 ,Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier ApplicationsApplications Unit: mm High power gain: Gpe = 2dB (typ.) (f = 10.7 MHz) Recommended for FM I ..
2SC2715 ,Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications2SC2715 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2715 High Frequen ..
2SC2721 ,Silicon transistorDATA SHEETSILICON TRANSISTOR2SC2721NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-FREQUENCY AMPLIF ..
2SC2721 ,Silicon transistorDATA SHEETSILICON TRANSISTOR2SC2721NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-FREQUENCY AMPLIF ..
2SC2735JTL-E , Silicon NPN Epitaxial
2SC2736 , Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V
2N5195
Leaded Power Transistor General Purpose
2N5195MEDIUM POWER PNP SILICON TRANSISTOR STMicroelectronics PREFERRED
SALESTYPE PNP TRANSISTOR
APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION The 2N5195 is a silicon epitaxial-base PNP
transistor in Jedec SOT-32 plastic package.
It is inteded for use in medium power linear and
switching applications.
The complementary NPN type is 2N5192.
December 2000
ABSOLUTE MAXIMUM RATINGS1/5
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
∗ Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
Safe Operating Area Derating Curves
2N51952/5
DC Current Gain
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
2N51953/5
2N51954/5
. consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2000 STMicroelectronics – Printed in Italy – All Rights Reserved
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2N51955/5
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