2N5195 ,Leaded Power Transistor General PurposeAPPLICATIONS ■ LINEAR AND SWITCHING INDUSTRIALEQ ..
2N5195 ,Leaded Power Transistor General Purpose3I , COLLECTOR CURRENT (A) μCVOLTAGE (VOLTS)θ , TEMPERATURE COEFFICIENTS (mV/ ° C), EXTERNAL BASE ..
2N5195 ,Leaded Power Transistor General Purpose2N5195®MEDIUM POWER PNP SILICON TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPE ■ PNP TRANSISTOR
2N5195G , Silicon PNP Power Transistors
2N5196 ,Dual N-channel JFET general purpose amplifier.S-04031—Rev. D, 04-Jun-018-12N5196/5197/5198/5199Vishay Siliconix ..
2N5197 ,Dual N-channel JFET general purpose amplifier.S-04031—Rev. D, 04-Jun-018-3g – Forward Transconductance (mS)fs2N5196/5197/5198/5199Vishay Siliconi ..
2SC2715 ,Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier ApplicationsApplications Unit: mm High power gain: Gpe = 2dB (typ.) (f = 10.7 MHz) Recommended for FM I ..
2SC2715 ,Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications2SC2715 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2715 High Frequen ..
2SC2721 ,Silicon transistorDATA SHEETSILICON TRANSISTOR2SC2721NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-FREQUENCY AMPLIF ..
2SC2721 ,Silicon transistorDATA SHEETSILICON TRANSISTOR2SC2721NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-FREQUENCY AMPLIF ..
2SC2735JTL-E , Silicon NPN Epitaxial
2SC2736 , Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V
2N5194-2N5195
Leaded Power Transistor General Purpose
Silicon PNP Power T ransistors.. for use in power amplifier and switching circuits, — excellent
safe area limits. Complement to NPN 2N5191, 2N5192
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*Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width � 300 μs, Duty Cycle � 2.0%.
*ON Semiconductor Preferred Device
