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2N5191ONN/a110avaiNPN SILICON TRANSISTOR GENERAL PURPOSE POWER


2N5191 ,NPN SILICON TRANSISTOR GENERAL PURPOSE POWERELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
2N5194 ,Leaded Power Transistor General Purpose2V , COLLECTOR-EMITTER VOLTAGE (VOLTS) h , DC CURRENT GAIN (NORMALIZED)CE FE2N5194 2N51952.0+2.5*A ..
2N5195 ,Leaded Power Transistor General PurposeAPPLICATIONS ■ LINEAR AND SWITCHING INDUSTRIALEQ ..
2N5195 ,Leaded Power Transistor General Purpose3I , COLLECTOR CURRENT (A) μCVOLTAGE (VOLTS)θ , TEMPERATURE COEFFICIENTS (mV/ ° C), EXTERNAL BASE ..
2N5195 ,Leaded Power Transistor General Purpose2N5195®MEDIUM POWER PNP SILICON TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPE ■ PNP TRANSISTOR
2N5195G , Silicon PNP Power Transistors
2SC2715 ,Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier ApplicationsApplications Unit: mm  High power gain: Gpe = 2dB (typ.) (f = 10.7 MHz)  Recommended for FM I ..
2SC2715 ,Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications2SC2715 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2715 High Frequen ..
2SC2721 ,Silicon transistorDATA SHEETSILICON TRANSISTOR2SC2721NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-FREQUENCY AMPLIF ..
2SC2721 ,Silicon transistorDATA SHEETSILICON TRANSISTOR2SC2721NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-FREQUENCY AMPLIF ..
2SC2735JTL-E , Silicon NPN Epitaxial
2SC2736 , Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V


2N5191
NPN SILICON TRANSISTOR GENERAL PURPOSE POWER
2N5190, 2N5191, 2N5192
Silicon NPN Power
Transistors.. for use in power amplifier and switching circuits, — excellent
safe area limits. Complement to PNP 2N5194, 2N5195. ESD Ratings: Machine Model, C; > 400 V
Human Body Model, 3B; > 8000 V Epoxy Meets UL 94, V−0 @ 1/8” Pb−Free Package is Available*
MAXIMUM RATINGS

Maximum ratings are those values beyond which device damage can oc-
cur. Maximum ratings applied to the device are individual stress limit values
(not normal operating conditions) and are not valid simultaneously. If these
limits are exceeded, device functional operation is not implied, damage
may occur and reliability may be affected.
THERMAL CHARACTERISTICS

*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
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