2N5172 ,NPN General Purpose Amplifier2N51722N5172B TO-92CENPN General Purpose AmplifierThis device is designed for use as general purpos ..
2N5172 ,NPN General Purpose Amplifier2N51722N5172B TO-92CENPN General Purpose AmplifierThis device is designed for use as general purpos ..
2N5172 ,NPN General Purpose Amplifierapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
2N5189 ,Conductor Products, Inc. - SILICON N-P-N HIGH-VOLTAGE TRANSISTOR
2N5191 ,NPN SILICON TRANSISTOR GENERAL PURPOSE POWERELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
2N5194 ,Leaded Power Transistor General Purpose2V , COLLECTOR-EMITTER VOLTAGE (VOLTS) h , DC CURRENT GAIN (NORMALIZED)CE FE2N5194 2N51952.0+2.5*A ..
2SC2714 ,Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications FM, RF, MIX,IF Amplifier ApplicationsApplications Unit: mmFM, RF, MIX,IF Amplifier
2SC2714-O , High Frequency Amplifier Applications
2SC2714-O , High Frequency Amplifier Applications
2SC2715 ,Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier ApplicationsApplications Unit: mm High power gain: Gpe = 2dB (typ.) (f = 10.7 MHz) Recommended for FM I ..
2SC2715 ,Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications2SC2715 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2715 High Frequen ..
2SC2721 ,Silicon transistorDATA SHEETSILICON TRANSISTOR2SC2721NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-FREQUENCY AMPLIF ..
2N5172
NPN General Purpose Amplifier
2N5172 2N5172 B TO-92 C E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 25 V CEO V Collector-Base Voltage 25 V CBO V Emitter-Base Voltage 5.0 V EBO I Collector Current - Continuous 500 mA C Operating and Storage Junction Temperature Range -55 to +150 T , T °C J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units 2N5172 P Total Device Dissipation 625 mW D Derate above 25°C 5.0 mW/°C R Thermal Resistance, Junction to Case 83.3 C/W θ ° JC R Thermal Resistance, Junction to Ambient 200 °C/W θJA 1997
