2N5115 ,P-Channel JFET SwitchS-04030—Rev. E, 04-Jun-019-4Capacitance (pF) I – Drain Current (mA) I – Drain Current (mA)D DI – Ga ..
2N5116 ,Conductor Products, Inc. - P-CHANNEL JFET
2N5118 ,DIELECTRICALLY ISOLATED DUAL PNP GENERAL PURPOSE AMPLLIFIERa E SOLID STATE fill DEIBaisnaL lMrlsly31hn 3 I
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2"5"117'2N5119IIIN'I'EKIIIL. a
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2N5154 ,Conductor Products, Inc. - BJTS, SI NPN POWER
2N5160 ,Conductor Products, Inc. - PNP SILICON AMPLIFIER TRANSISTOR
2N5160 ,Conductor Products, Inc. - PNP SILICON AMPLIFIER TRANSISTOR
2SC2712-Y , NPN Plastic-Encapsulate Transistors
2SC2712-Y-- , Silicon NPN Transistors
2SC2713 ,Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier ApplicationsApplications Unit: mm High voltage: V = 120 V CEO Excellent h linearity: h (I = 0.1 mA)/h (I ..
2SC2713-GR , Audio Frequency General Purpose Amplifier Applications
2SC2714 ,Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications FM, RF, MIX,IF Amplifier ApplicationsApplications Unit: mmFM, RF, MIX,IF Amplifier
2SC2714-O , High Frequency Amplifier Applications
2N5114-2N5115
P-Channel JFET Switch
2N5114/5115/5116
Vishay Siliconix
P-Channel JFETs�������� �������� ������������ Low On-Resistance: 2N5114 <75 � Fast Switching—tON: 16 ns High Off-Isolation—ID(off): –10 pA Low Capacitance: 6 pF Low Insertion Loss Low Error Voltage High-Speed Analog Circuit Performance Negligible “Off-Error,” Excellent Accuracy Good Frequency Response Eliminates Additional Buffering Analog Switches Choppers Sample-and-Hold Normally “On” Switches Current Limiters
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The 2N5114 series consists of p-channel JFET analog
switches designed to provide low on-resistance, good
off-isolation, and fast switching. These JFETs are optimized
for use in complementary switching applications with the
Vishay Siliconix 2N4856A series.
The 2N5114 series is available with JAN, JANTX, or JANTXV
level processing, (see 2N5114 JAN series data sheet).
TO-206AA
(TO-18)Top View
Case
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Gate-Drain Voltage 30 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate-Source Voltage 30 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current –50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature –65 to 200�C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature –55 to 200�C. . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (1/16” from case for 10 sec.) 300�C. . . . . . . . . . . . . . . . . . .
Power Dissipationa 500 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes Derate 3 mW/�C above 25�C
