2N5087TF ,PNP General Purpose Amplifierapplications at collector currents to 50mA.2SOT-23TO-921Mark: 2Q11. Emitter 2. Base 3. Collecto ..
2N5088 ,Leaded Small Signal Transistor General Purpose3V , TOTAL NOISE VOLTAGE (nV) I , NOISE CURRENT (pA) e , NOISE VOLTAGE (nV)T n nNF, NOISE FIGURE (d ..
2N5089 ,Leaded Small Signal Transistor General Purpose
2N5089 ,Leaded Small Signal Transistor General PurposeELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
2N5089 ,Leaded Small Signal Transistor General Purpose
2N5089 ,Leaded Small Signal Transistor General Purpose
2SC2712-O , NPN Plastic-Encapsulate Transistors
2SC2712Y , Silicon NPN Transistors
2SC2712Y , Silicon NPN Transistors
2SC2712-Y , NPN Plastic-Encapsulate Transistors
2SC2712-Y , NPN Plastic-Encapsulate Transistors
2SC2712-Y , NPN Plastic-Encapsulate Transistors
2N5087TF
PNP General Purpose Amplifier
2N5086/2N5087/MMBT5087 2N5086/2N5087/MMBT5087 PNP General Purpose Amplifier 3 This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50mA. 2 SOT-23 TO-92 1 Mark: 2Q 1 1. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Emitter Voltage -50 V CEO V Collector-Base Voltage -50 V CBO V Emitter-Base Voltage -3.0 V EBO I Collector current - Continuous -100 mA C T , T Junction and Storage Temperature -55 ~ +150 °C J stg * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units Off Characteristics V Collector-Emitter Breakdown Voltage * I = -1.0mA, I = 0 -50 V (BR)CEO C B V Collector-Base Breakdown Voltage I = -100μA, I = 0 -50 V (BR)CBO C E I Collector Cutoff Current V = -10V, I = 0 -10 nA CEO CB E V = -35V, I = 0 -50 nA CB E I Emitter Cutoff Current V = -3.0V, I = 0 -50 nA CBO EB C On Characteristics h DC Current Gain I = -100μA, V = -5.0V 5086 150 500 FE C CE 5087 250 800 I = -1.0mA, V = -5.0V 5086 150 C CE 5087 250 I = -10mA, V = -5.0V 5086 150 C CE 5087 250 V Collector-Emitter Saturation Voltage I = -10mA, I = -1.0mA -0.3 V CE(sat) C B V Base-Emitter On Voltage I = -1.0mA, V = -5.0V -0.85 V BE(on) C CE Small Signal Characteristics f Current Gain Bandwidth Product I = -500μA, V = -5.0V, f = 20MHz 40 MHz T C CE C Collector-Base Capacitance V = -5.0V, I = 0, f = 100KHz 4.0 pF cb CB E h Small-Signal Current Gain I = -1.0mA, V = -5.0V, 5086 150 600 fe C CE f = 1.0KHz 5087 250 900 NF Noise Figure I = -100μA, V = -5.0V 5086 3.0 dB C CE R = 3.0kΩ, f = 1.0KHz 5087 2.0 dB S I = -20μA, V = -5.0V 5086 3.0 dB C CE R = 10kΩ 5087 2.0 dB S f = 10Hz to 15.7KHz * Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0% ©2003 Rev. B1, September 2003
