2N5086 ,Leaded Small Signal Transistor General Purpose
2N5086 ,Leaded Small Signal Transistor General Purpose
2N5086 ,Leaded Small Signal Transistor General Purpose
2N5087 , 0.625W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 2503R , SOURCE RESISTANCE (OHMS) R , SOURCE RESISTANCE (OHMS) e , NOISE VOLTAGE (nV)S S nR , SOURCE RE ..
2N5087TF ,PNP General Purpose Amplifierapplications at collector currents to 50mA.2SOT-23TO-921Mark: 2Q11. Emitter 2. Base 3. Collecto ..
2N5088 ,Leaded Small Signal Transistor General Purpose3V , TOTAL NOISE VOLTAGE (nV) I , NOISE CURRENT (pA) e , NOISE VOLTAGE (nV)T n nNF, NOISE FIGURE (d ..
2SC2712GR , Silicon NPN Transistors
2SC2712GR , Silicon NPN Transistors
2SC2712-GR , NPN Plastic-Encapsulate Transistors
2SC2712-GR , NPN Plastic-Encapsulate Transistors
2SC2712-GR , NPN Plastic-Encapsulate Transistors
2SC2712-GR , NPN Plastic-Encapsulate Transistors
2N5086
Leaded Small Signal Transistor General Purpose
2N5086 / MMBT5086 / 2N5087 / MMBT5087 2N5086 MMBT5086 2N5087 MMBT5087 C E C TO-92 B B SOT-23 E Mark: 2P / 2Q PNP General Purpose Amplifier This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50 mA. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 50 V CEO V Collector-Base Voltage 50 V CBO V Emitter-Base Voltage 5.0 V EBO I Collector Current - Continuous 100 mA C T , T Operating and Storage Junction Temperature Range -55 to +150 °C J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics TA= 25°C unless otherwise noted Symbol Characteristic Max Units 2N5086 *MMBT5086 2N5087 *MMBT5087 P Total Device Dissipation 625 350 mW D 5.0 2.8 Derate above 25°C mW/°C R Thermal Resistance, Junction to Case 83.3 °C/W θJC Thermal Resistance, Junction to Ambient 200 357 R °C/W θJA *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 2001 2N5086/2N5087/MMBT5086/MMBT5087, Rev A
