2N4856A ,Leaded JFET General PurposeS-04028—Rev. D, 04-Jun-017-3Switching Time (ns) r – Drain-Source On-Resistance ( Ω ) r – Drain-Sour ..
2N4857A ,Leaded JFET General PurposeS-04028—Rev. D, 04-Jun-017-2I – Saturation Drain Current (mA)DSS2N4856A/4857A/4858AVishay Siliconix ..
2N4858A ,Leaded JFET General PurposeS-04028—Rev. D, 04-Jun-017-12N4856A/4857A/4858AVishay Siliconix Gate-Drain, Gat ..
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I-rl-il-ill-
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2SC2671 ,Silicon NPN epitaxial planer type(For UHF band low-noise amplification)Absolute Maximum Ratings (Ta=25˚C)n+0.2 +0.2Parameter Symbol Ratings Unit0.45 –0.1 0.45 –0.1Collec ..
2N4856A-2N4857A-2N4858A
Leaded JFET General Purpose
VISHAY
2N4856Al4857A/4858A
N-Channel JFETs
Vishay Siliconix
PRODUCT SUMMARY
Part Veaom V BR)GSS IDSS Min rDS(on) Max |D(off) Typ ton Typ
Number ( J in (V) (mA) (Q) (pA) (ns)
2N4856A -4 to -1 0 -40 50 25 5 4
2N4857A -2 to -6 -40 20 40 5 4
2N4858A Ah8 to -4 -40 8 60 5 4
FEATURES BENEFITS APPLICATIONS
. Low On-Resistance: 2N4856A . Low Error Voltage q Analog Switches
<25 Q o High-Speed Analog Circuit Performance q Choppers
q Fast Switching-toN: 4 ns . Negligible "Off-Error," Excellent Accuracy q Sample-and-Hold
q High Oft-Isolation-Iron: 5 PA . Good Frequency Response q Normally "On" Switches
q Low Capacitance: 3 pF . Eliminates Additional Buffering q Current Limiters
. Low Insertion Loss
DESCRIPTION
The 2N4856A/4857A/4858A all-purpose JFET analog
switches offer low on-resistance, low capacitance, good
isolation, and fast switching.
Hermetically-sealed TO-206AA (TO-18) packaging allows full
military processing (see Military Information). For similar
products in TO-226AA (TO-92) and SOT-23 packages, see the
J/SST111 series data sheet. For similar duals, see the
2N5564/5565/5566 data sheet.
TO-206AA
(TO-18)
D G and Case
Top Mew
DocumentNumber: 70243
S-04028-Rev. D, 04-Jun-01
www.vishay.com
2N4856Al4857A/4858A
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
VISHAY
Gate-Drain, Gate-Source Voltage : (2N4856A-58A) _.-............ -40 V Operating Junction Temperature _.-....................... -55 to 200°C
Gate Current ...V_P..__P..V_.P.l.P.l.P.Vl.P._ 50 mA Power Dissipation" ........................................... 1.8 W
Lead Temperature (1/15" from case for 10 seconds) .............. 300 "C Notes
Storage Temperature .................................. -65 to 200°C a. Derate 10 mW/°C for TC > 25°C
SPECIFICATIONS (TA = 25°C UNLESS OTHERWISE NOTED)
Limits
2N4856A 2N4857A 2N4858A
Parameter Symbol Test Conditions Typa Min Max Min Max Min Max Unit
Static
Gate-Source - -
Breakdown Voltage V(BR)GSS ks - -1 ”A , Vos - 0 V -55 -40 -40 40 V
Gate-Source Cutoff Voltage VGSM) VDS = 15 V, ID = 0.5 nA -4 -10 -2 -6 Ah8 -4
Saturation Drain Currentb IDSS I/os = 15 V, VGS = 0 V 50 20 100 8 80 mA
VGS = -20 V, VDS = 0 V -5 -250 -250 -250 pA
Gate Reverse Current less
TA = 150°C -13 -500 -500 -500 nA
Gate Operating Current0 IG VDG = 15 V, ID = 10 mA -5
VDs = 15 V, N/ss = -10 V 5 250 250 250 p
Drain Cutoff Current 'D(off)
TA = 150°C 13 500 500 500 nA
ID = 5 mA 0.25 0.5
Drain-Source On-Voltage VDS(0n) VGS = 0 V ID = 10 mA 0.35 0.5 V
ID = 20 mA 0.5 0.75
Drain-Source On-Resistancec roam) VGS = 0 V, b = 1 mA 25 40 60 Q
Gate-Source Forward VoltageC VGS(F) ls = 1 mA , Vos = 0 V 0.7 V
Dynamic
Common-Source
gts 6 mS
Forward TransconductanceC VDs = 20 V, ID = 1 mA
Common-Source f= 1 kHz
Output Conductancec Jos 25 ws
. . V = 0 V, I = 0 mA
Drain-Source On-Resistance rdsmn) GS f-- 1 'ei, 25 40 60 Q
Common-Source
. Ciss 7 10 10 10
Input Capacitance Vrrs = 0 V, VGs = -10 V pF
Common-Source C f: 1 MHz 3 4 3 5 3 5
Reverse Transfer Capacitance rss V
Equivalent Input é VDS = 10 V, ID = 10 mA 3 hi
Noise Voltages n f= 1 kHz \le
Switching
T O T td(on) 2 5 6 8
urn- n Ime - -
VDD =10V,VGSH - 0V
t, See Switching Circuit 2 3 4 8 ns
Turn-Off Time toss: 12 20 40 80
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NCB
b. Pulse test: PW s 100 us duty cycle s10%.
C. This parameter not registered with JEDEC.
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Document Number: 70243
S-04028-Rev. D, 04-Jun-01
VISHAY
2N4856Al4857A/4858A
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
On-Resistance and Drain Current
100 vs. Gate-Source Cutoff Voltage
ros@lo=1mA,Vss=0
koss@VDs=20V,Vss=0
row”) — Drain-Source On-Resistance ( fl )
0 -2 -4 -6 -8
Vssom - Gate-Source Cutoff Voltage (V)
On-Resistance vs. Temperature
ID = 1 mA
r x 0.7%/''C
80 Kssmm = -2 V
rDS(on) — Drain-Source On-Resistance ( Q)
-55 -35 -15 5 25 45 65 85
TA - Temperature (° C)
Tu rn-Off Switching
td(off) independent of device Vssom
1/ros = 5 V, VGS(L) = -10 V
Vesrao = -2 V
Switching Time (ns)
tu(oit)
Vssmm = -8 V
0 2 4 6 8
ID - Drain Current (mA)
(VLU)1U9JJnO U!BJG uoneJmes — S'S‘CH
row”) — Drain-Source On—Resistance ( Q )
Switching Time (ns)
Capacitance (pF)
On-Resistance vs. Drain Current
TA=25°C
Vssor) = -2 V
10 100
ID - Drain Current (mA)
Turn-On Switching
tr approximately independent of ID
VoG=5V, RG=50W
VGS(L) = -10 V
-2 -4 -45 -8 -1 O
VGsom - Gate-Source Cutoff Voltage (V)
Capacitance vs. Gate-Source Voltage
f=1MHz
Ciss @ Vos = 0V
Crss @ Vos = 0V
-4 -8 -1 2 -1 6 -20
VGS - Gate-Source Voltage (V)
Document Number: 70243
S-04028-Reu. D, 04-Jun-01
www.vishay.com
2N4856Al4857A/4858A VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
. Forward Transconductance and Output Conductance
Noise Voltage vs. Frequency vs. Gate-Source Cutoff Voltage
100 50 500
‘10V gfsand Qos@VDS=20V
DG- A Vss=OV,f= kHz
A E, 40 400 lil
L: o I
_ sis, f?
Ct, , 30 300 E.
(D O co
g' u o
- 10 w 20
r'-- 2
a E 20 200 %
fil t E
' I 92
lat I 10 100
10 100 1 k 10k 100k 0 -2 -4 -6 -8 -10
f- Frequency (Hz) Vesmm - Gate-Source Cutoff Voltage (V)
10 A Gate Leakage Current Common-Gate Input Admittance
lsss@25 C VDG=10V
|D=10mA |D=10mA
T = 125°C = o
1 nA A TA 25 c
g 100 pA
8 10 A
I I 2 a
9 GSS @ 5 C 1
lG(on) @ ID
0.1 pA 0.1
0 6 12 18 24 30 100 200 500 1000
Vos - Drain-Gate Voltage (V) f - Frequency (MHz)
Common-Gate Forward Admittance Common-Gate Reverse Admittance
VDG=10V VDG=10V
ko=10mA ko=10mA
TA=25°C TA=25°C
10 -brg
G" Fi"
100 200 500 1000 100 200 500 1000
f - Frequency (MHz) f - Frequency (MHz)
www.vishay.com Document Number: 70243
7-4 S-04028-Rev. D, 04-Jun-01
VISHAY
2N4856Al4857A/4858A
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
Common-Gate Output Admittance
VDG=10V
lD=10mA
TA=25°C
f- Frequency (MHz)
Output Characteristics
VGS(off) = -4 V
ID— Drain Current (mA)
Ws - Drain-Source Voltage (V)
0.8 1.0
ID — Drain Current (mA)
ID— Drain Current (mA)
Output Characteristics
Vssom = -2 V
0 0.2 0.4 0.6 0.8 1.0
VDs - Drain-Source Voltage (V)
Output Characteristics
VGS(0ff) = -8 V
0 0.2 0.4 0.6 0.8 1.0
VDS - Drain-Source Voltage (V)
SWITCHING TIME TEST CIRCUIT RL
2N4856A 2N4857A 2N4858A
-o OUT
VGSm -10 V -6 V -4 V
Rf 464 Q 953 Q 1910 Q
loam) 20 mA 10 mA 5 mA
'Non-inductive
INPUT PULSE SAMPLING SCOPE
Rise Time < 1 ns Rise Tlme 0.4 ns
Fall Time < 1 ns Input Resistance 10 MQ
Pulse VWdth 100 ns Input Capacitance 1.5 pF
PRF 1 MHz
Document Number: 70243 www.vishay.com
S-04028-Reu. D,
04-Jun-01
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