2N4403TFR ,PNP General Purpose Amplifier2N4403 / MMBT44032N4403 MMBT4403CETO-92CBSOT-23BEMark: 2TPNP General Purpose AmplifierThis device i ..
2N4409 , 0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.250A Ic, 60ELECTRICAL CHARACTERISTICS (25° C Ambient Temperature unless otherwise noted) (Note 6)
TEST COND ..
2N4410 ,Amplifier Transistor(NPN Silicon)
2N4410 ,Amplifier Transistor(NPN Silicon)
2N4410 ,Amplifier Transistor(NPN Silicon)
2N4410 ,Amplifier Transistor(NPN Silicon)
2SC2626 ,TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE HIGH SPEED SWITCHINGA-35
2SC2626 1tr::epx'''7--F5vt,vAe
hlPN'-x-gt8tftti-frf, TRIPLE DIFFUSED PLANER TYPE
mm. 35 ..
2SC2631 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SC2632 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SC2634 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC2641 ,TRANSISTOR (UHF BAND POWER AMPLIFIER APPLICATIONS)2SC2641TOSHIBA TRANSISTOR SILICON NPN EPlTAXIAL PLANAR T7QC7641'tiN...--UHF BAND POWER AMPLIFIER
2SC2641 ,TRANSISTOR (UHF BAND POWER AMPLIFIER APPLICATIONS)APPLICATIONS Unit in mmOutput Power : P0=6W(Min.)(f-- 470MHz, VCC = 12.6V, Pi = 1W)MAXIMUM RATINGS ..
2N4403BU-2N4403TA-2N4403TFR-MMBT4403_NL
PNP General Purpose Amplifier
2N4403 / MMBT4403 2N4403 MMBT4403 C E TO-92 C B SOT-23 B E Mark: 2T PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 40 V CEO V Collector-Base Voltage 40 V CBO V Emitter-Base Voltage 5.0 V EBO IC Collector Current - Continuous 600 mA Operating and Storage Junction Temperature Range -55 to +150 T , T °C J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units 2N4403 *MMBT4403 P Total Device Dissipation 625 350 mW D 5.0 2.8 Derate above 25°C mW/°C Thermal Resistance, Junction to Case 83.3 RθJC °C/W R Thermal Resistance, Junction to Ambient 200 357 °C/W θJA *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 2001 2N4403/MMBT4403, Rev. C
