2N4400 ,Leaded Small Signal Transistor General Purpose
2N4400 ,Leaded Small Signal Transistor General Purpose
2N4400 ,Leaded Small Signal Transistor General Purpose
2N4400 ,Leaded Small Signal Transistor General PurposeELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
2N4401 ,Leaded Small Signal Transistor General PurposeThermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.Parameter Sy ..
2N4401RLRAG ,General Purpose TransistorsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
2SC2618 , Low frequency amplifier. Collector-base voltage VCBO 35 V
2SC2618 , Low frequency amplifier. Collector-base voltage VCBO 35 V
2SC2618 , Low frequency amplifier. Collector-base voltage VCBO 35 V
2SC2618RCTL-E , Silicon NPN Epitaxial
2SC2619 , High frequency amplifier.Collector-base voltage VCBO 30 V
2SC2619FCTR-E , Silicon NPN Epitaxial
2N4400
Leaded Small Signal Transistor General Purpose
2N4400 / MMBT4400 MMBT4400 2N4400 C E C TO-92 B B SOT-23 E Mark: 83 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 40 V CEO V Collector-Base Voltage 60 V CBO V Emitter-Base Voltage 6.0 V EBO I Collector Current - Continuous 600 mA C Operating and Storage Junction Temperature Range -55 to +150 T , T °C J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units 2N4400 *MMBT4400 P Total Device Dissipation 625 350 mW D 5.0 2.8 Derate above 25°C mW/°C R Thermal Resistance, Junction to Case 83.3 °C/W θJC R Thermal Resistance, Junction to Ambient 200 357 °C/W θJA 2001 2N4400/MMBT4400, Rev A
