2N4391 ,N-Channel silicon junction field-effect transistorS-04028—Rev. F, 04-Jan-017-12N/PN/SST4391 SeriesVishay Siliconix Gate-Drain, Ga ..
2N4391 ,N-Channel silicon junction field-effect transistorFEATURES ABSOLUTE MAXIMUM RATINGS
II . rotony<300 Ohms (2N4391) (T A=25°C unless otherwise noted)
..
2N4392 ,Low Noise, N-Channel JFET SwitchS-04028—Rev. F, 04-Jan-017-3I – Saturation Drain Current (mA)DSS2N/PN/SST4391 SeriesVishay Siliconi ..
2N4393 ,Low Noise, N-Channel JFET SwitchS-04028—Rev. F, 04-Jan-017-4r – Drain-Source On-Resistance ( Ω )Switching Time (ns)r – Drain-Source ..
2N4399 , PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/433
2N4399 , PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/433
2SC2603 , NPN SILICON TRANSISTOR
2SC2614 , HIGH VOLTAGE, HIGH SPEED AND HIGH POWER SWITCHING
2SC2618 , Low frequency amplifier. Collector-base voltage VCBO 35 V
2SC2618 , Low frequency amplifier. Collector-base voltage VCBO 35 V
2SC2618 , Low frequency amplifier. Collector-base voltage VCBO 35 V
2SC2618RCTL-E , Silicon NPN Epitaxial
2N4391-ITE4392