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2N4338-2N4339-2N4341
N-Channel JFET Low Noise Amplifier
VISHAY
2N4338l4339/4340/4341
Vishay Siliconix
N-Channel JFETs
PRODUCT SUMMARY
Part Number VGs(off) (V) V(BR)GSS Min (V) gts Min (mS) loss Max (mA)
2N4338 Ah3 to -1 -50 0.6 0.6
2N4339 -0.6 to -1.8 -50 0.8 1.5
2N4340 -1 to -3 -50 1.3 3.6
2N4341 -2 to -6 -50 2 9
FEATURES BENEFITS APPLICATIONS
q Low Cutoff Voltage: 2N4338 <1 V q Full Performance from Low-Voltage q High-Gain, Low-Noise Amplifiers
q High Input Impedance Power Supply: Down to 1 V q Low-Current, Low-Voltage
. Very Low Noise q Low Signal Loss/System Error Battery-Powered Amplifiers
. High Gain: Av = 80 @ 20 WA q High System Sensitivity q Infrared Detector Amplihers
q High-Quality Low-Level Signal q Ultrahigh Input Impedance
Amplification Pre-Amplihers
DESCRIPTION
The 2N4338l4339/4340/4341 n-channel JFETs are designed
for sensitive amplifier stages at low- to mid-frequencies. Low
cut-off voltages accommodate Iow-level power supplies and
low leakage for improved system accuracy.
The TO-206AA (TO-18) package is hermetically sealed and
suitable for military processing (see Military Information). For
similar products in TO-226AA (TO-92) and TO-236 (SOT-23)
packages, see the J/SST201 series data sheet.
TO-ZOGAA
(TO-1 8)
D G and Case
Top View
ABSOLUTE MAXIMUM RATINGS
Gate-Source/Gate-Drain/age _.............................. -50 V Lead Temperature (I/us'' from case for 10 sec.) A.................. 300°C
Forward Gate Current _........................................ 50 mA Power Dissipation" ..__....l..l....._....._.... 300 mW
Storage Temperature _.................................. -65 to 200°C Notes
Operating Junction Temperature ..._....._....._....._.... -55 to 175°C a. Derate 2 mW/°C above 25°C
For applications information see AN102 and AN106.
Document Number: 70240
S-04028-Rev. E, 04-Jun-01
www.vishaycom
2N4338/4339/434OI4341 VISHAY
Vishay Siliconix
SPECIFICATIONS FOR 2N4338 AND 2N4339 (TA = 25°C UNLESS OTHERWISE NOTED)
Limits
2N4338 2N4339
Parameter Symbol Test Conditions Typa Min Max Min Max Unit
Static
Gate-Source Breakdown Voltage V(BR)GSS ks = -1 WA , VDS = 0 V -57 -50 -50
Gate-Source Cutoff Voltage VGS(off) VDS = 15 V, ID = 0.1 WA -0.3 -1 -0.6 -C8
Saturation Drain Currentb loss Vos = 15 V, VGS = 0 V 0.2 0.6 0.5 1.5 mA
VGs = -30 V, Vros = O V -2 -100 -100 pA
Gate Reverse Current less
TA = 150°C -4 -100 -100 nA
Gate Operating Currentb IG VDG = 15 V, ID = 0.1 mA -2
Drain Cutoff Current ID(ott) V03 = 15 V, VGS = -5 V 2 50 50 p
Gate-Source Forward Voltage" VGS(F) IG = 1 mA , VDS = 0 V 0.7 V
Dynamic
Common-Source
Forward Transconductance 9ts 0.6 1.8 0.8 2.4 mS
fs-- 15 V,VGS=OV,f=1kHz
Common-Source 5 15 s
Output Conductance Jos 11
Drain-Source On-Resistance rum”) VDs = 0 V, VGS = 0 V, f= 1 kHz 2500 1700 Q
Common-Source
Input Capacitance Ciss 5 7 7
VDs=15 V,1/ss=0V,t=1MHz pF
Common-Source C 1 5 3 3
Reverse Transfer Capacitance rss .
Equivalent Input Noise Voltagec En VDS = 10 V, VGS = 0 V, f= 1 kHz 6 3%
. . 1/Ds=15V,Vss=0V
Noise Figure NF f-- 1 kHz, Rs = 1 MQ 1 1 dB
SPECIFICATIONS FOR 2N434O AND 2N4341 (TA = 25°C UNLESS OTHERWISE NOTED)
Limits
2N4340 2N4341
Parameter Symbol Test Conditions Typa Min Max Min Max Unit
Static
Gate-Source Breakdown Voltage V(BR)GSS ls = -1 Is/k , Vos = 0 V -57 -50 -50
Gate-Source Cutoff Voltage Vssem Vos = 15 V, ID = 0.1 11A -1 -3 -2 -6
Saturation Drain Currentb loss VDS = 15 V, VGS = 0 V 1.2 3.6 3 9 mA
VGS = -30 V, VDS = 0 V -2 -100 -100 pA
Gate Reverse Current IGSS
TA = 150°C -4 -100 -100 nA
Gate Operating Currentb ls VDG = 15 V, ID = 0.1 mA -2
VGS = -5 V 2 50 pA
Drain Cutoff Current I V = 15 V
D(off) DS VGS = -10 v 3 70
Gate-Source Forward Voltage VGS(F) IG = 1 mA , VDS = 0 V 0.7 V
www.vishay.com Document Number: 70240
7-2 S-04028-Reu E, 04-Jun-01
VISHAY
2N4338l4339/4340/4341
Vishay Siliconix
SPECIFICATIONS FOR 2N4340 AND 2N4341 (TA = 25°C UNLESS OTHERWISE NOTED)
Limits
2N4340 2N4341
Parameter Symbol Test Conditions Typa Min Max Min Max Unit
Dynamic
Common-Source
Forward Transconductance gts 1.3 3 2 4 m8
Vos-- 15 V,VGS=0V,f=1kHz
Common-Source 30 60 S
Output Conductance Jos [I
Drain-Source On-Resistance rds(on) Vos = 0 V, VGS = 0 V, f= 1 kHz 1500 800 C2
Common-Source _
Input Capacitance Ciss 5 7 7
VDs=15 V,Vss--0V,f=1MHz pF
Common-Source C 1 5 3 3
Reverse Transfer Capacitance rss
Equivalent Input Noise VoltageC 6n Vos = 10 V, VGS = 0 V, f= 1 kHz 6 3H1;
. . Vros=15 V,Vss=0V
Noise Figure NF f: 1 kHz, RG = 1 MQ 1 1 dB
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing, NPA
b. Pulse test: PW 5300 us, duty cycle s3%.
c. This parameter not registered with JEDEC.
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
5 10nA
koss@Vros=10V,Vss=0V D
gts@Ws=10V,Vss=0V a
f=1kHz I
ii" 4 gl
"C." ji, Ct
6 3 ii' % 100pA
C m (D
a 8 TI
c 2 g o 10pA
u9. a I
ts. 8 _o
I 1 {/3 1pA
0 0.1 pA
o -1 -2 -3 -4 -5 0
Vssom - Gate-Source Cutoff Voltage (V)
Gate Leakage Current
ID=100 mA
1nA TA=125°C
less @ 125°C
500 mA
|D=100 mA
lsss @ 25°C
12 18 24 30
Vos - Drain-Gate Voltage (V)
Document Number: 70240
S-04028-Reu. E, 04-Jun-01
www.vishaycom
2N4338/4339/4340l4341
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
rDS(on) — Drain—Source On—Resistance ( Q )
'i 240
.5 160
g. 180
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
ros@ b-- 100 mA,Vss=0V
905@Vos= 10V, Vss=0V,f=1 kHz
-l -2 -3 -4 -5
VGS(st) - Gate-Source Cutoff Voltage (V)
Output Characteristics
I/asian) = Al.? V
VGS = 0 V
4 8 12 16 20
V93 - Drain-Source Voltage (V)
Output Characteristics
VGsom = AJ.7 v
0.1 0.2 0.3 0.4 0.5
Vos - Drain-Source Voltage (V)
(311) souepnpuoo 1nd1no — 506
ID — Drain Current (mA) g; — Forward Transconductance (mS)
ID — Drain Current (mA)
Common-Source Forward Transconductance
vs. Drain Current
kfssmm = -1.5 V
0.01 0.1 1
ID - Drain Current (mA)
Output Characteristics
VGsom = -1.5 V
4 8 12 16 20
Ws - Drain-Source Voltage (V)
Output Characteristics
VGsom = -1.5 V
-0.9 V
0.2 0.4 0.6 0.8 1.0
Vos - Drain-Source Voltage (V)
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Document Number: 70240
S-04028-Reu E, 04-Jun-01
VISHAY 2N4338I4339/4340/4341
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
Transfer Characteristics Transfer Characteristics
Vssom = -0.7 V VDs = 10 V Vases) = -1.5 v Vos = 10 v
TA = -55''C
T: 300 r: 25°C
'5 's /
.5 200 E
O -0.1 -0.2 -0.3 -0.4 -0.5 0 Ah4 Ah8 -1.2 -1.6 -2
Vas - Gate-Source Voltage (V) Vas - Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage Transconductance vs. Gate-Source Voltage
Vsson = -0.7 V 1/ros = 10 V
f= 1 kHz
VGsom = -1 .5 V Vos = 10 V
f= 1 kHz
TA-- -55''C
gfs — FonNard Transconductance (mS)
gfs — Forward Transconductance (mS)
0 -0.1 -0.2 -0.3 -0.4 -0.5 0 -0.4 -0.8 -1.2 -1.6 -2
Vas - Gate-Source Voltage (V) Vas - Gate-Source Voltage (V)
Circuit Voltage Gain vs. Drain Current On-Resistance vs. Drain Current
200 2000
gfs h TA = 25''C
AV = -
1 + RLgos
160 Assume VDD = 15 V, I/ras = 5 V 1600
L |D Yssmo = Ah7 V
120 1200
80 800
A] — Voltage Gain
VGsegr) = Ah? V
40 400
rDs(on) — Drain-Source On-Resistance ( Q )
0.01 0.1 1 0.01 0.1 1
ID - Drain Current (mA) ID - Drain Current (mA)
Document Number: 70240
www.vishaycom
S-04028-Reu. E, 04-Jun-01
2N4338/4339/4340l4341
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
Ciss — Input Capacitance (pF)
gas — Output Conductance (HS)
Common-Source Input Capacitance
vs. Gate-Source Voltage
f=1MHz
-4 -8 -1 2 -1 6
N/ss - Gate-Source Voltage (V)
Output Conductance vs. Drain Current
VGS(off)=_1-5V VDS=10V
f=1kHz
ID - Drain Current (mA)
Crss — Reverse Feedback Capacitance (pF)
En — Noise Voltage (nV/ V Hz >
Common-Source Reverse Feedback
Capacitance vs. Gate-Source Voltage
f=1MHz
0 -4 -8 -1 2 -1 6 -20
Veg - Gate-Source Voltage (V)
Equivalent Input Noise Voltage vs. Frequency
VDS=10V
ko=100 mA
ID = loss
10 100 1 k 10 k 100 k
f - Frequency (Hz)
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Document Number: 70240
S-04028-Reu E, 04-Jun-01
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