2N4126 ,Leaded Small Signal Transistor General Purpose
2N4126 ,Leaded Small Signal Transistor General Purpose
2N4126 ,Leaded Small Signal Transistor General Purpose
2N4126 ,Leaded Small Signal Transistor General PurposeElectrical Characteristics (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
2N4126 ,Leaded Small Signal Transistor General PurposeThermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.Parameter Sy ..
2N4126 ,Leaded Small Signal Transistor General Purpose
2SC2540 , NPN EPITAXIAL PLANAR TYPE(RF POWER TRANSISTOR)
2SC2552 ,Silicon NPN Power Transistors TO-220C package2SC2552TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)SWITCHING REGULATOR AND HIG ..
2SC2552 ,Silicon NPN Power Transistors TO-220C packageAPPLICATIONS. I m Rh/WX msinz IExcellent Switching Times: tr=1.0,us (Max.) tf=1.0,us (Max.) at 10:0 ..
2SC2553 , Silicon NPN Power Transistors
2SC2555 ,POWER TRANSISTORS(8.0A,400V,80W)ELECTRICAL CHARACTERISTICS (Ta =25°C) Weight : 4.6gCHARACTERISTIC SYMBOL TEST CONDITION UNITomector ..
2SC2562 , SILICON NPN EXPITAXIAL TYPE (PCT PROCESS)
2N4126
Leaded Small Signal Transistor General Purpose
2N4126 / MMBT4126 2N4126 MMBT4126 C E TO-92 C B B SOT-23 E Mark: ZF PNP General Purpose Amplifier This device is designed for general purpose amplifier and switch- ing applications at collector currents to 10 μA as a switch and to 100 mA as an amplifier. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 25 V CEO V Collector-Base Voltage 25 V CBO V Emitter-Base Voltage 4.0 V EBO I Collector Current - Continuous 200 mA C Operating and Storage Junction Temperature Range -55 to +150 C T , T ° J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics TA= 25°C unless otherwise noted Symbol Characteristic Max Units 2N4126 *MMBT4126 P Total Device Dissipation 625 350 mW D Derate above 25 C 5.0 2.8 mW/ C ° ° R Thermal Resistance, Junction to Case 83.3 °C/W θJC Thermal Resistance, Junction to Ambient 200 357 Rθ °C/W JA *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 2N4126/MMBT4126, Rev A 2001
