2N4125TA ,PNP General Purpose Amplifier2N41252N4125TO-92CBEPNP General Purpose AmplifierThis device is designed for use as general purpose ..
2N4126 ,Leaded Small Signal Transistor General Purpose
2N4126 ,Leaded Small Signal Transistor General Purpose
2N4126 ,Leaded Small Signal Transistor General Purpose
2N4126 ,Leaded Small Signal Transistor General PurposeElectrical Characteristics (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
2N4126 ,Leaded Small Signal Transistor General PurposeThermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.Parameter Sy ..
2SC2540 , NPN EPITAXIAL PLANAR TYPE(RF POWER TRANSISTOR)
2SC2552 ,Silicon NPN Power Transistors TO-220C package2SC2552TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)SWITCHING REGULATOR AND HIG ..
2SC2552 ,Silicon NPN Power Transistors TO-220C packageAPPLICATIONS. I m Rh/WX msinz IExcellent Switching Times: tr=1.0,us (Max.) tf=1.0,us (Max.) at 10:0 ..
2SC2553 , Silicon NPN Power Transistors
2SC2555 ,POWER TRANSISTORS(8.0A,400V,80W)ELECTRICAL CHARACTERISTICS (Ta =25°C) Weight : 4.6gCHARACTERISTIC SYMBOL TEST CONDITION UNITomector ..
2SC2562 , SILICON NPN EXPITAXIAL TYPE (PCT PROCESS)
2N4125TA
PNP General Purpose Amplifier
2N4125 2N4125 TO-92 C B E PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents of 10 μA to 100 mA. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 30 V V Emitter-Base Voltage 4.0 V EBO I Collector Current - Continuous 200 mA C Operating and Storage Junction Temperature Range -55 to +150 °C TJ, Tstg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units 2N4125 P Total Device Dissipation 625 mW D ° 5.0 ° Derate above 25 C mW/ C Rθ Thermal Resistance, Junction to Case 83.3 °C/W JC Thermal Resistance, Junction to Ambient 200 °C/W Rθ JA 2001 2N4125, Rev A
