2N4125 ,Amplifier transistor. Collector-emitter voltage: Vceo = -30V. Collector-base voltage: Vcbo = -30V. Collector dissipation: Pc(max) = 625mW.
2N4125 ,Amplifier transistor. Collector-emitter voltage: Vceo = -30V. Collector-base voltage: Vcbo = -30V. Collector dissipation: Pc(max) = 625mW.
2N4125 ,Amplifier transistor. Collector-emitter voltage: Vceo = -30V. Collector-base voltage: Vcbo = -30V. Collector dissipation: Pc(max) = 625mW.
2N4125 ,Amplifier transistor. Collector-emitter voltage: Vceo = -30V. Collector-base voltage: Vcbo = -30V. Collector dissipation: Pc(max) = 625mW.
2N4125TA ,PNP General Purpose Amplifier2N41252N4125TO-92CBEPNP General Purpose AmplifierThis device is designed for use as general purpose ..
2N4126 ,Leaded Small Signal Transistor General Purpose
2SC2527 ,SILICON HIGH SPEED POWER TRANSISTORapplications.
The 2SC 2527 is especially well-suited for High frequency power amplifiers, Audio
..
2SC2528 , SILICON HIGH SPEED POWER TRANSISTOR
2SC2532 ,Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Driver Stage for LED Lamp Applications Temperature Compensation ApplicationsApplications High h : h (1) = 5000 (min) (IC = 10 mA) FE FE h (2) = 10000 (min) (IC = 100 mA) ..
2SC2540 , NPN EPITAXIAL PLANAR TYPE(RF POWER TRANSISTOR)
2SC2552 ,Silicon NPN Power Transistors TO-220C package2SC2552TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)SWITCHING REGULATOR AND HIG ..
2SC2552 ,Silicon NPN Power Transistors TO-220C packageAPPLICATIONS. I m Rh/WX msinz IExcellent Switching Times: tr=1.0,us (Max.) tf=1.0,us (Max.) at 10:0 ..
2N4125
Amplifier transistor. Collector-emitter voltage: Vceo = -30V. Collector-base voltage: Vcbo = -30V. Collector dissipation: Pc(max) = 625mW.
2N4125 2N4125 TO-92 C B E PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents of 10 μA to 100 mA. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 30 V V Emitter-Base Voltage 4.0 V EBO I Collector Current - Continuous 200 mA C Operating and Storage Junction Temperature Range -55 to +150 °C TJ, Tstg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units 2N4125 P Total Device Dissipation 625 mW D ° 5.0 ° Derate above 25 C mW/ C Rθ Thermal Resistance, Junction to Case 83.3 °C/W JC Thermal Resistance, Junction to Ambient 200 °C/W Rθ JA 2001 2N4125, Rev A
