2N4124 ,Leaded Small Signal Transistor General PurposeELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
2N4124TA ,NPN General Purpose Amplifier2N4124 / MMBT41242N4124 MMBT4124CETO-92CB BSOT-23EMark: ZCNPN General Purpose AmplifierThis device ..
2N4125 ,Amplifier transistor. Collector-emitter voltage: Vceo = -30V. Collector-base voltage: Vcbo = -30V. Collector dissipation: Pc(max) = 625mW.
2N4125 ,Amplifier transistor. Collector-emitter voltage: Vceo = -30V. Collector-base voltage: Vcbo = -30V. Collector dissipation: Pc(max) = 625mW.
2N4125 ,Amplifier transistor. Collector-emitter voltage: Vceo = -30V. Collector-base voltage: Vcbo = -30V. Collector dissipation: Pc(max) = 625mW.
2N4125 ,Amplifier transistor. Collector-emitter voltage: Vceo = -30V. Collector-base voltage: Vcbo = -30V. Collector dissipation: Pc(max) = 625mW.
2SC2512 , Silicon NPN Triple Diffused
2SC2512 , Silicon NPN Triple Diffused
2SC2512 , Silicon NPN Triple Diffused
2SC2516 , Silicon NPN Power Transistors
2SC2517 ,Silicon transistor
2SC2527 ,SILICON HIGH SPEED POWER TRANSISTORapplications.
The 2SC 2527 is especially well-suited for High frequency power amplifiers, Audio
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2N4124
Leaded Small Signal Transistor General Purpose
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NPN Silicon
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
OFF CHARACTERISTICS Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%.
COLLECTOR
BASE
EMITTER
