2N4123 ,Leaded Small Signal Transistor General Purpose
2N4123 ,Leaded Small Signal Transistor General Purpose
2N4123 ,Leaded Small Signal Transistor General Purpose
2N4124 ,Leaded Small Signal Transistor General PurposeELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
2N4124TA ,NPN General Purpose Amplifier2N4124 / MMBT41242N4124 MMBT4124CETO-92CB BSOT-23EMark: ZCNPN General Purpose AmplifierThis device ..
2N4125 ,Amplifier transistor. Collector-emitter voltage: Vceo = -30V. Collector-base voltage: Vcbo = -30V. Collector dissipation: Pc(max) = 625mW.
2SC2512 , Silicon NPN Triple Diffused
2SC2512 , Silicon NPN Triple Diffused
2SC2512 , Silicon NPN Triple Diffused
2SC2516 , Silicon NPN Power Transistors
2SC2517 ,Silicon transistor
2SC2527 ,SILICON HIGH SPEED POWER TRANSISTORapplications.
The 2SC 2527 is especially well-suited for High frequency power amplifiers, Audio
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2N4123
Leaded Small Signal Transistor General Purpose
2N4123 [[]]]]]]]]]]]]]]]]]]]]]]]]]]]]] 2N4123 TO-92 C B E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 30 V CEO VCBO Collector-Base Voltage 40 V V Emitter-Base Voltage 5.0 V EBO I Collector Current - Continuous 200 mA C Operating and Storage Junction Temperature Range -55 to +150 °C T , T J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units 2N4123 P Total Device Dissipation 625 mW D 5.0 Derate above 25°C mW/°C Rθ Thermal Resistance, Junction to Case 83.3 °C/W JC Thermal Resistance, Junction to Ambient 200 °C/W RθJA 2001 2N4123, Rev A
