2N3958 ,Low Noise, Low Drift, Monolithic Dual, N-Channel JFETS-04031—Rev. B, 04-Jun-018-4 V – VGS1 GS2A – Voltage Gain I – Drain Current (mA)V D() V/C tCMRR ..
2N3958 ,Low Noise, Low Drift, Monolithic Dual, N-Channel JFETS-04031—Rev. B, 04-Jun-018-12N3958Vishay Siliconix ..
2N3962 ,Leaded Small Signal Transistor General PurposeELECTRICAL CHARACTERISTICS (25° C Ambient Temperature unless otherwise noted) (Note 6)
SYMBOL CH ..
2N3963 , Bipolar PNP Device in a Hermetically sealed TO18
2N3963 , Bipolar PNP Device in a Hermetically sealed TO18
2N396A , alloy-junction germanium transistors
2SC2463 , Low frequency amplifier. Collector-base voltage VCBO 55 V
2SC2463 , Low frequency amplifier. Collector-base voltage VCBO 55 V
2SC2466 , SILICON NPN EPITAXIAL UHF AMPLIFIER
2SC2468 , SILICON NPN EPITAXIAL UHF AMPLIFIER
2SC2468 , SILICON NPN EPITAXIAL UHF AMPLIFIER
2SC2469 , SILICON NPN EPITAXIAL UHF AMPLIFIER
2N3958
Low Noise, Low Drift, Monolithic Dual, N-Channel JFET
2N3958
Vishay Siliconix
Monolithic N-Channel JFET Dual�������� �������� ������������ Monolithic Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: 5 pA Low Noise: 9 nV⁄√Hz High CMRR: 100 dB Tight Differential Match vs. Current Improved Op Amp Speed, Settling Time
Accuracy Minimum Input Error/Trimming Requirement Insignificant Signal Loss/Error Voltage High System Sensitivity Minimum Error with Large Input Signal Wideband Differential Amps High-Speed,
Temp-Compensated,
Single-Ended Input Amps High Speed Comparators Impedance Converters
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The low cost 2N3958 JFET dual is designed for
high-performance differential amplification for a wide range of
precision test instrumentation applications. This series
features tightly matched specs, low gate leakage for accuracy,
and wide dynamic range with IG guaranteed at VDG = 20 V.
The hermetically-sealed TO-71 package is available with full
military processing (see Military Information and the
2N5545/5546/5547JANTX/JANTXV data sheet).
For similar products see 2N5196/5197/5198/5199, the
low-noise U/SST401 series, the high-gain 2N5911/5912, and
the low-leakage U421/423 data sheets.
TO-71Top View
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Gate-Drain, Gate-Source Voltage –50 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current 50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation : Per Sidea 250 mW. . . . . . . . . . . . . . . . . . . . . . . .
Totalb 500 mW. . . . . . . . . . . . . . . . . . . . . . . . . . .
