2N3904TA ,NPN General Purpose Amplifierapplications involving pulsed or low duty cycle operations.Thermal Characteristics T = 25°C un ..
2N3904ZL1G , General Purpose Transistors NPN Silicon
2N3905 ,PNP Silicon Epitaxial Planar Transistor
2N3905 ,PNP Silicon Epitaxial Planar Transistor
2N3905 ,PNP Silicon Epitaxial Planar Transistor
2N3905 ,PNP Silicon Epitaxial Planar Transistor
2SC2458-BL , TO-92 Plastic Package Transistors (NPN)
2SC2458-BL , TO-92 Plastic Package Transistors (NPN)
2SC2458-L ,TRANSISTOR (AUDIO/ LOW NOISE AUDIO AMPLIFIER APPLICATIONS)APPLICATIONS4.2MAX.High Current Capability :IC = 150mA (Max.)ZMAXHigh DC Current Gain: hFE = 70--70 ..
2SC2462 , Low frequency amplifier. Collector-base voltage VCBO 50 V
2SC2462 , Low frequency amplifier. Collector-base voltage VCBO 50 V
2SC2462 , Low frequency amplifier. Collector-base voltage VCBO 50 V
2N3904TA-MMBT3904_NL
NPN General Purpose Amplifier
2N3904 / MMBT3904 / PZT3904 2N3904 MMBT3904 PZT3904 C C E E C TO-92 C B B SOT-23 B E SOT-223 Mark: 1A NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings* T = 25°C unless otherwise noted A Symbol Parameter Value Units V Collector-Emitter Voltage 40 V CEO V Collector-Base Voltage 60 V CBO V Emitter-Base Voltage 6.0 V EBO I Collector Current - Continuous 200 mA C T , T Operating and Storage Junction Temperature Range -55 to +150 °C J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics T = 25°C unless otherwise noted A Symbol Characteristic Max Units 2N3904 *MMBT3904 **PZT3904 P Total Device Dissipation 625 350 1,000 mW D Derate above 25°C 5.0 2.8 8.0 mW/°C Thermal Resistance, Junction to Case 83.3 R °C/W θJC R Thermal Resistance, Junction to Ambient 200 357 125 °C/W θJA *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 2 **Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm . 2001 2N3904/MMBT3904/PZT3904, Rev A
