2N3859A ,Leaded Small Signal Transistor General Purpose
2N3859A ,Leaded Small Signal Transistor General Purpose
2N3859A ,Leaded Small Signal Transistor General Purpose
2N3860 , Small Signal Transistors
2N3860 , Small Signal Transistors
2N3899 ,35A silicon controlled rectifier. Vrsom(non-rep) 700V.
2SC2412KT146Q , General purpose transistor (50V, 0.15A)
2SC2412K-T146Q , General purpose transistor (50V, 0.15A)
2SC2412KT146R , General purpose transistor (50V, 0.15A)
2SC2412KT146R , General purpose transistor (50V, 0.15A)
2SC2412-R , NPN Silicon Epitaxial Transistors
2SC2413K , High-frequency Amplifier Transistor (25V, 50mA, 300MHz)
2N3859A
Leaded Small Signal Transistor General Purpose
2N3859A 2N3859A NPN General Purpose Amplifier • This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. • Sourced from Process 10. • See PN100 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Emitter Voltage 60 V CEO V Collector-Base Voltage 60 V CBO V Emitter-Base Voltage 6.0 V EBO I Collector Current - Continuous 500 mA C T , T Operating and Storage Junction Temperature Range -55 ~ +150 °C J ST * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics BV Collector-Emitter Breakdown Voltage I = 1.0mA, I = 0 60 V (BR)CEO C B BV Collector-Base Breakdown Voltage I = 100μA, I = 0 60 V (BR)CBO C E BV Emitter-Base Breakdown Voltage I = 100μA, I = 0 6.0 V (BR)EBO E C I Collector Cut-off Current V = 18V, I = 0 0.5 μA CBO CB E I Emitter Cut-off Current V = 4.0V, I = 0 0.5 μA EBO EB C On Characteristics * h DC Current Gain V = 1.0V, I = 1.0mA 75 FE CE C V = 1.0V, I = 1.0mA 100 200 CE C Small Signal Characteristics C Current Gain Bandwidth Product V = 10V, f = 1.0MHz 4 pF ob CB f Output Capacitance I = 2.0mA, V = 10V 90 250 MHz T C CE rb’C Collector-Base Time Constant V = 10V, I = 2.0mA 150 pS c CE C f = 31.9MHz * Pulse Test: Pulse ≤ 300μs, Duty Cycle ≤ 2.0% Thermal Characteristics T =25°C unless otherwise noted A Symbol Parameter Max. Units P Total Device Dissipation 625 mW D Derate above 25°C 5.0 mW/°C R Thermal Resistance, Junction to Case 83.3 °C/W θJC R Thermal Resistance, Junction to Ambient 200 °C/W θJA ©2002 Rev. B, July 2002
