2N3820 ,P-Channel General Purpose Amplifierapplications with high impedance signal sources. Sourced from process 89.TO-9211. Drain 2. Gate ..
2N3820 ,P-Channel General Purpose Amplifier2N38202N3820P-Channel General Purpose Amplifier This device is designed primarily for low level au ..
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2SC2412K T146Q , General purpose transistor (50V, 0.15A)
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2N3820
P-Channel General Purpose Amplifier
2N3820 2N3820 P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from process 89. TO-92 1 1. Drain 2. Gate 3. Source Epitaxial Silicon Transistor Absolute Maximum Ratings* T =25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain-Gate Voltage -20 V DG V Gate-Source Voltage 20 V GS I Forward Gate Current 10 mA GF T Storage Temperature Range -55 ~ 150 °C STG * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics V Gate-Source Breakdwon Voltage I = 10μA, V = 0 20 V (BR)GSS G DS I Gate Reverse Current V = 10V, V = 0 20 nA GSS GS DS V (off) Gate-Source Cutoff Voltage V = -10V, I = -10μA8.0V GS DS D On Characteristics I Zero-Gate Voltage Drain Current * V = -10V, V = 0 -0.3 -15 mA DSS DS GS Small Signal Characteristics gfs Forward Transfer Conductance V = -10V, V = 0, f = 1.0KHz 800 5000 μmhos DS GS C Input Capacitance V = -10V, V = 0, f = 1.0KHz 32 pF iss DS GS C Reverse Transfer Capacitance V = -10V, V = 0, f = 1.0KHz 16 pF rss DS GS * Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2% Thermal Characteristics T =25°C unless otherwise noted A Symbol Parameter Max. Units P Total Device Dissipation 350 mW D Derate above 25°C 2.8 mW/°C R Thermal Resistance, Junction to Case 125 °C/W θJC R Thermal Resistance, Junction to Ambient 357 °C/W θJA * Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06” ©2002 Rev. A1, December 2002
