2N3819 ,Leaded JFET General Purposeapplications operating up to 450MHz, and for analog switching requiring low capacitance. Sourced f ..
2N3819 ,Leaded JFET General Purpose2N38192N3819N-Channel RF Amplifier This device is designed for RF amplifier and mixer
2N3820 ,P-Channel General Purpose Amplifierapplications with high impedance signal sources. Sourced from process 89.TO-9211. Drain 2. Gate ..
2N3820 ,P-Channel General Purpose Amplifier2N38202N3820P-Channel General Purpose Amplifier This device is designed primarily for low level au ..
2N3821 ,Conductor Products, Inc. - JFETS LOW FREQUENCY, LOW NOISE
2N3855A ,Conductor Products, Inc. - SILICON TRANSISTORS
2SC2412K T146Q , General purpose transistor (50V, 0.15A)
2SC2412K T146Q , General purpose transistor (50V, 0.15A)
2SC2412K T146R , General purpose transistor (50V, 0.15A)
2SC2412K T146R , General purpose transistor (50V, 0.15A)
2SC2412K T146R , General purpose transistor (50V, 0.15A)
2SC2412K T146R-- , General purpose transistor (50V, 0.15A)
2N3819
N-Channel RF Amplifier
2N3819 2N3819 N-Channel RF Amplifier This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. Sourced from process 50. TO-92 1 1. Drain 2. Gate 3. Source Epitaxial Silicon Transistor Absolute Maximum Ratings* T =25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain-Gate Voltage 25 V DG V Gate-Source Voltage -25 V GS I Drain Current 50 mA D I Forward Gate Current 10 mA GF T Storage Temperature Range -55 ~ 150 °C STG * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics V Gate-Source Breakdwon Voltage I = 1.0μA, V = 0 25 V (BR)GSS G DS I Gate Reverse Current V = -15V, V = 0 2.0 nA GSS GS DS V (off) Gate-Source Cutoff Voltage V = 15V, I = 2.0nA 8.0 V GS DS D V Gate-Source Voltage V = 15V, I = 200μA -0.5 -7.5 V GS DS D On Characteristics I Zero-Gate Voltage Drain Current V = 15V, V = 0 2.0 20 mA DSS DS GS Small Signal Characteristics gfs Forward Transfer Conductance V = 15V, V = 0, f = 1.0KHz 2000 6500 μmhos DS GS goss Output Conductance V = 15V, V = 0, f = 1.0KHz 50 μmhos DS GS y Reverse Transfer Admittance V = 15V, V = 0, f = 1.0KHz 1600 μmhos fs DS GS C Input Capacitance V = 15V, V = 0, f = 1.0KHz 8.0 pF iss DS GS C Reverse Transfer Capacitance V = 15V, V = 0, f = 1.0KHz 4.0 pF rss DS GS Thermal Characteristics T =25°C unless otherwise noted A Symbol Parameter Max. Units P Total Device Dissipation 350 mW D Derate above 25°C 2.8 mW/°C R Thermal Resistance, Junction to Case 125 °C/W θJC R Thermal Resistance, Junction to Ambient 357 °C/W θJA * Device mounted on FR-4 PCB 1.5” × 1.6” × 0.06” ©2002 Rev. A1, December 2002
