2N3772 ,HIGH POWER NPN SILICON POWER TRANSISTORSELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
2N3773 ,COMPLEMENTARY SILICON POWER TRANSISTORSTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, R 1.17 °C/WJCJunction−to− ..
2N3789 ,Conductor Products, Inc. - SILICON PNP POWER TRANSISTORS
2N3809 , SILICON DUAL DIFFERNTIAL AMPLIFIER TRANSISTORS
2N3809 , SILICON DUAL DIFFERNTIAL AMPLIFIER TRANSISTORS
2N3819 ,Leaded JFET General Purposeapplications operating up to 450MHz, and for analog switching requiring low capacitance. Sourced f ..
2SC2412K T146Q , General purpose transistor (50V, 0.15A)
2SC2412K T146 R , General purpose transistor (50V, 0.15A)
2SC2412K T146Q , General purpose transistor (50V, 0.15A)
2SC2412K T146Q , General purpose transistor (50V, 0.15A)
2SC2412K T146R , General purpose transistor (50V, 0.15A)
2SC2412K T146R , General purpose transistor (50V, 0.15A)
2N3772
HIGH POWER NPN SILICON POWER TRANSISTORS
High Power NPN Silicon Power
Transistors.. designed for linear amplifiers, series pass regulators, and
inductive switching applications. Forward Biased Second Breakdown Current Capability
IS/b = 3.75 Adc @ VCE = 40 Vdc — 2N3771
= 2.5 Adc @ VCE = 60 Vdc — 2N3772
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*Indicates JEDEC Registered Data.
2000 25 50 75 100 125 150 175 200
Figure 1. Power DeratingTC, CASE TEMPERATURE ( °C)
, POWER DISSIP
TION (W
TTS)
*ON Semiconductor Preferred Device
