2N3704 ,Leaded Small Signal Transistor General Purpose
2N3704 ,Leaded Small Signal Transistor General Purpose
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2SC2412K T146Q , General purpose transistor (50V, 0.15A)
2SC2412K T146Q , General purpose transistor (50V, 0.15A)
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2N3704
Leaded Small Signal Transistor General Purpose
2N3704 2N3704 NPN General Purpose Amplifier • This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. • Sourced from Process 10. • See PN100 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Emitter Voltage 30 V CEO V Collector-Base Voltage 50 V CBO V Emitter-Base Voltage 5.0 V EBO I Collector Current - Continuous 500 mA C T , T Operating and Storage Junction Temperature Range -55 ~ +150 °C J ST * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics BV Collector-Emitter Breakdown Voltage I = 10mA, I = 0 30 V (BR)CEO C B BV Collector-Base Breakdown Voltage I = 100μA, I = 0 50 V (BR)CBO C E BV Emitter-Base Breakdown Voltage I = 100μA, I = 0 5.0 V (BR)EBO E C I Collector Cut-off Current V = 20V, I = 0 100 nA CBO CB E I Emitter Cut-off Current V = 3.0V, I = 0 100 nA EBO EB C On Characteristics * h DC Current Gain V = 5.0V, I = 50mA 100 300 FE CE C V (sat) Collector-Emitter Saturation Voltage I = 100mA, I = 5.0mA 0.5 1.0 V CE C B V (on) Collector-Emitter On Voltage V = 2.0V, I = 100mA 0.6 V BE CE C Small Signal Characteristics C Current Gain Bandwidth Product V = 10V, f = 1.0MHz 12 pF ob CB f Output Capacitance I = 50mA, V = 2.0V 100 MHz T C CE * Pulse Test: Pulse ≤ 300μs, Duty Cycle ≤ 2.0% Thermal Characteristics T =25°C unless otherwise noted A Symbol Parameter Max. Units P Total Device Dissipation 625 mW D Derate above 25°C 5.0 mW/°C R Thermal Resistance, Junction to Case 83.3 °C/W θJC R Thermal Resistance, Junction to Ambient 200 °C/W θJA ©2002 Rev. B, July 2002
