2N3703 ,Leaded Small Signal Transistor General Purpose
2N3703 ,Leaded Small Signal Transistor General Purpose
2N3703 ,Leaded Small Signal Transistor General Purpose
2N3704 ,Leaded Small Signal Transistor General Purpose
2N3704 ,Leaded Small Signal Transistor General Purpose
2N3707 ,Conductor Products, Inc. - NPN PLANAR SILICON TRANSISTORS
2SC2411KT146R , Medium Power Transistor (32V, 0.5A)
2SC2412K T146Q , General purpose transistor (50V, 0.15A)
2SC2412K T146 R , General purpose transistor (50V, 0.15A)
2SC2412K T146Q , General purpose transistor (50V, 0.15A)
2SC2412K T146Q , General purpose transistor (50V, 0.15A)
2SC2412K T146R , General purpose transistor (50V, 0.15A)
2N3703
Leaded Small Signal Transistor General Purpose
2N3703 2N3703 PNP General Purpose Amplifier • This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. • Sourced from Process 66. TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings* T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Emitter Voltage -30 V CEO V Collector-Base Voltage -50 V CBO V Emitter-Base Voltage -5.0 V EBO I Collector Current - Continuous -500 mA C T , T Operating and Storage Junction Temperature Range -55 ~ +150 °C J ST * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics BV Collector-Emitter Breakdown Voltage I = -10mA, I = 0 -30 V (BR)CEO C B BV Collector-Base Breakdown Voltage I = -100μA, I = 0 -50 V (BR)CBO C E BV Emitter-Base Breakdown Voltage I = -100μA, I = 0 -5.0 V (BR)EBO E C I Collector Cut-off Current V = -20V, I = 0 -100 nA CBO CB E I Emitter Cut-off Current V = -3.0V, I = 0 -100 nA EBO EB C On Characteristics * h DC Current Gain V = -5.0V, I = -50mA 30 150 FE CE C V (sat) Collector-Emitter Saturation Voltage I = -50mA, I = -5.0mA -0.25 V CE C B V (sat) Base-Emitter Saturation Voltage V = -5.0V, I = -50mA -0.6 -1.0 V BE CE C Small Signal Characteristics C Current Gain Bandwidth Product V = -10V, f = 1.0MHz 12 pF ob CB f Output Capacitance I = -50mA, V = -5.0V 100 MHz T E CE f = 20MHz * Pulse Test: Pulse ≤ 300μs, Duty Cycle ≤ 2.0% Thermal Characteristics T =25°C unless otherwise noted A Symbol Parameter Max. Units P Total Device Dissipation 625 mW D Derate above 25°C 5.0 mW/°C R Thermal Resistance, Junction to Case 83.3 °C/W θJC R Thermal Resistance, Junction to Ambient 200 °C/W θJA ©2002 Rev. B, July 2002
