2N3700 ,GENERAL TRANSISTOR NPN SILICONapplications.TO-18INTERNAL SCHEMATIC DIAGRAM
2N3700 ,GENERAL TRANSISTOR NPN SILICONABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Collector-base Voltage (I =0) 140 VCBO EV Coll ..
2N3700 ,GENERAL TRANSISTOR NPN SILICONELECTRICAL CHARACTERISTICS (25° C Ambient Temperature unless otherwise noted) (Note 6)
SYMBOL CH ..
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2N3700
GENERAL TRANSISTOR NPN SILICON
2N3700GENERAL PURPOSE AMPLIFIERS
The 2N3700isa silicon planar epitaxial NPN tran-
sistorin Jedec TO-18 metal case,intended forsmall
signal,low noise industrial applications.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value UnitVCBO Collector-base Voltage(IE =0) 140 V
VCEO Collector-emitter Voltage(IB =0) 80 V
VEBO Emitter-base Voltage(IC =0) 7 V Collector Current 1 A
Ptot Total Power DissipationatTamb≤25°C Tcase≤25°C
DESCRIPTION
INTERNAL SCHEMATIC DIAGRAM
TO-18
ELECTRICAL CHARACTERISTICS (Tamb =25°C unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. UnitICBO Collector Cutoff Current(IE =0) VCB =90V
VCB =90V Tamb =150°C
IEBO Emitter Cutoff Current(IC =0) VEB=5V 10 nA
V(BR)CBO Collector-base Breakdown
Voltage(IE =0) IC =100μA 140 V
V(BR)CEO* Collector-emitter Breakdown
Voltage(IB =0) IC =30mA 80 V
V(BR)EBO Emitter-base Breakdown Voltage
(IC =0) IE =100 μA7 V
VCE(sat)* Collector-emitter Saturation
Voltage =150mA =500mA =15mA =50mA
VBE(sat)* Base-emitter Saturation Voltage IC=150mA IB=15mA 1.1 V
hFE* DC Current Gain=0.1mA =10mA =150mA =500mA=1A =150mA
Tamb=–55°C
VCE =10V
VCE =10V
VCE =10V
VCE =10V
VCE =10V
VCE =10V
hfe Small Signal Current Gain IC=1mA=1kHz
VCE=5V 80 400 Transition Frequency IC =50mA=20 MHz
VCE =10V 100 MHz
CEBO Emitter-base Capacitance IC=01 MHz
VEB=0.5V 60 pF
CCBO Collector-base Capacitance IE=01 MHz
VCB =10V 12 pF
rbb’Cb’c Feedback Time Constant IC =10mA4 MHz
VCB =10V 25 400 ps Pulsed: pulse duration=300μs,duty cycle=1%.
THERMAL DATARth j-case
Rth j-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
°C/W
°C/W
2N3700
DIM. inch
MIN. TYP. MAX. MIN. TYP. MAX. 12.7 0.500 0.49 0.019 5.3 0.208 4.9 0.193 5.8 0.228 2.54 0.100 1.2 0.047 1.16 0.045
L45o 45o
E
TO-18 MECHANICAL DATA
2N3700
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written approvalof SGS-THOMSONMicroelectonics. 1994 SGS-THOMSON Microelectronics-All Rights Reserved
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2N3700
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