2N3663 ,NPN RF Transistor2N36632N3663TO-92BCENPN RF TransistorThis device is designed for use as RF amplifiers, oscillators ..
2N3663 ,NPN RF Transistorapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
2N3669 , SILICON CONTROLLED RECTIFIER 16AMPS 220 THRU 800 VOLTS JEDEC TO-3 CASE
2N3684 ,Conductor Products, Inc. - N-CHANNEL JFET LOW NOISE AMPLIFIER
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2SC2411K T146Q , Medium Power Transistor (32V, 0.5A)
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2SC2412K T146Q , General purpose transistor (50V, 0.15A)
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2N3663
NPN RF Transistor
2N3663 2N3663 TO-92 B C E NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 12 V CEO VCBO Collector-Base Voltage 30 V V Emitter-Base Voltage 3.0 V EBO I Collector Current - Continuous 50 mA C Operating and Storage Junction Temperature Range -55 to +150 °C T , T J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units 2N3663 P Total Device Dissipation 350 mW D Derate above 25°C 2.8 mW/°C Rθ Thermal Resistance, Junction to Case 125 °C/W JC Rθ Thermal Resistance, Junction to Ambient 357 °C/W JA 1997
