2N3417 ,Leaded Small Signal Transistor General Purpose
2N3417 ,Leaded Small Signal Transistor General Purpose
2N3417 ,Leaded Small Signal Transistor General Purpose
2N3417 ,Leaded Small Signal Transistor General Purpose
2N3417 ,Leaded Small Signal Transistor General Purpose
2N3439 ,HIGH VOLTAGE AMPLIFIERS2N34392N3440®SILICON NPN TRANSISTORS■ STMicroelectronics PREFERREDSALESTYPES■ NPN TRANSISTORDESCRIP ..
2SC2371 , NPN Silicon Power Transistors
2SC2373 , POWER TRANSISTORS(7.5A,100V,40W)
2SC2383 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE COLOR TV VERT. DEFLECTION OUTPUT AND COLOR TV CLASS B SOUND OUTPUT APPLICATIONSAPPLICATIONS Unit in mmCOLOR TV CLASS B SOUND OUTPUT
2SC2389S , High-voltage Amplifier Transistor (120V, 50mA)
2SC2389-S , High-voltage Amplifier Transistor (120V, 50mA)
2SC2404 ,Small-signal deviceAbsolute Maximum Ratings T = 25°Ca10˚Parameter Symbol Rating UnitCollector-base voltage (Emitter o ..
2N3417
Leaded Small Signal Transistor General Purpose
2N3416 / 2N3417 2N3416 2N3417 TO-92 B C E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 50 V CEO VCBO Collector-Base Voltage 50 V V Emitter-Base Voltage 5.0 V EBO I Collector Current - Continuous 500 mA C Operating and Storage Junction Temperature Range -55 to +150 °C TJ, Tstg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units 2N3416 / 2N3417 P Total Device Dissipation 625 mW D 5.0 Derate above 25°C mW/°C R Thermal Resistance, Junction to Case 83.3 °C/W θJC Thermal Resistance, Junction to Ambient 200 R °C/W θJA 3416-3417, Rev B 1997
