2N3415 ,Leaded Small Signal Transistor General Purpose
2N3415 ,Leaded Small Signal Transistor General Purpose
2N3415 ,Leaded Small Signal Transistor General Purpose
2N3415 ,Leaded Small Signal Transistor General Purpose
2N3417 ,Leaded Small Signal Transistor General Purpose
2N3417 ,Leaded Small Signal Transistor General Purpose
2SC2362-K ,High-Voltage Low-Noise Amp ApplicationsOrderiné number: EN 5725No.572D( ):2SA1016,1016K
2SC2368 ,NPN SILICON TRANSISTORFEATURES . NF 2.3 dB TYP. @ 500 MHz
f o MAG 17 dB TYP. @ 500 MHz 22
E _ 35 a
a $9. “:38.
E ..
2SC2369 ,NPN SILICON HIGH FREQUNY TRANSISTORapplications. . _
FREQUENCY (MHz) NFmln (dB) GA OPT SOURCE HN/50 n
600 1.2 16.6 .36 A 69° A4
1 ..
2SC2371 , NPN Silicon Power Transistors
2SC2373 , POWER TRANSISTORS(7.5A,100V,40W)
2SC2383 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE COLOR TV VERT. DEFLECTION OUTPUT AND COLOR TV CLASS B SOUND OUTPUT APPLICATIONSAPPLICATIONS Unit in mmCOLOR TV CLASS B SOUND OUTPUT
2N3415
Leaded Small Signal Transistor General Purpose
2N3415 2N3415 TO-92 B C E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 25 V VCBO Collector-Base Voltage 25 V V Emitter-Base Voltage 5.0 V EBO I Collector Current - Continuous 500 mA C Operating and Storage Junction Temperature Range -55 to +150 °C TJ, Tstg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units 2N3415 P Total Device Dissipation 625 mW D ° 5.0 ° Derate above 25 C mW/ C Rθ Thermal Resistance, Junction to Case 83.3 °C/W JC Thermal Resistance, Junction to Ambient 200 °C/W Rθ JA 2001 2N3415, Rev B
