2N3393 ,Leaded Small Signal Transistor General Purpose
2N3393 ,Leaded Small Signal Transistor General Purpose
2N3393 ,Leaded Small Signal Transistor General Purpose
2N3415 ,Leaded Small Signal Transistor General Purpose
2N3415 ,Leaded Small Signal Transistor General Purpose
2N3415 ,Leaded Small Signal Transistor General Purpose
2SC2360 ,Si NPN planar. UHF amplifier.Features. atiPGrytit,'ivxo/High power gain (PG)q 1'iFtrhitt NF 7yr0fla,,?Low NFq Tr t '7- F AGC (tt ..
2SC2360 ,Si NPN planar. UHF amplifier.Absolute Maximum Ratings (Ta = 25 "C)-'-T'r-'-r-r,-,''" .Item Symbol Value Unit-'--'--it--C-':----C ..
2SC2362 ,High-Voltage Low-Noise Amp ApplicationsAbsolute Maximum Ratings at Ta=25°CCollector to Base VoltageCollector to Emitter VoltageEmitter to ..
2SC2362-K ,High-Voltage Low-Noise Amp ApplicationsOrderiné number: EN 5725No.572D( ):2SA1016,1016K
2SC2368 ,NPN SILICON TRANSISTORFEATURES . NF 2.3 dB TYP. @ 500 MHz
f o MAG 17 dB TYP. @ 500 MHz 22
E _ 35 a
a $9. “:38.
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2SC2369 ,NPN SILICON HIGH FREQUNY TRANSISTORapplications. . _
FREQUENCY (MHz) NFmln (dB) GA OPT SOURCE HN/50 n
600 1.2 16.6 .36 A 69° A4
1 ..
2N3393
Leaded Small Signal Transistor General Purpose
2N3390 / 2N3391 / 2N3391A / 2N3392 / 2N3393 Discrete POWER & Signal Technologies 2N3390 2N3391 2N3391A 2N3392 2N3393 B TO-92 C E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 25 V CEO V Collector-Base Voltage 25 V CBO V Emitter-Base Voltage 5.0 V EBO I Collector Current - Continuous 500 mA C Operating and Storage Junction Temperature Range -55 to +150 C T , T ° J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units 2N3390 / 3391/A / 3392 / 3393 PD Total Device Dissipation 625 mW Derate above 25°C 5.0 mW/°C Thermal Resistance, Junction to Case 83.3 R °C/W θJC Thermal Resistance, Junction to Ambient 200 R °C/W θJA 1997 3390-93, Rev B
